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参数资料
| 型号： | HMC283LM1 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 17000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | ROHS COMPLIANT, PLASTIC, SMT, 8 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 320K |
| 代理商： | HMC283LM1 |
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC283LM1
SMT MEDIUM POWER GaAs MMIC
AMPLIFIER, 17 - 40 GHz
v04.1201
General Description
Features
Functional Diagram
SMT mmWave Package
Psat Output Power: +21 dBm
High Gain: 21 dB
No External Matching Required
Electrical Specifications, T
A = +25° C, Vdd= +3.5V*, ldd = 300 mA
Typical Applications
The HMC283LM1 is a Medium Power Amplifier (MPA)
in a SMT leadless chip carrier package covering 17
to 40 GHz. The LM1 is a true surface mount broadband
millimeterwave package offering low loss & excel-
lent I/O match preserving MMIC chip performance.
Utilizing a GaAs PHEMT process, the device offers
20 dB gain and +21 dBm output power from a bias
supply of +3.5V @ 300mA. As an alternative to chip-
and-wire hybrid assemblies the HMC283LM1 elimi-
nates the need for wirebonding, thereby providing
a consistent connection interface for the customer.
The amplifier may be used as a frequency doubler.
A built-in-test pad (Vdet) allows monitoring of micro-
wave output power. All data is with the non-hermetic,
epoxy sealed LM1 packaged MPA device mounted in
a 50 ohm test fixture.
The HMC283LM1 is ideal for:
Millimeterwave Point-to-Point Radios
LMDS
SATCOM
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
17 - 40
21 - 30
GHz
Gain
15
20
17
22
dB
Gain Variation over Temperature
0.05
0.07
0.05
0.07
dB/°C
Input Return Loss
6
10
6
12
dB
Output Return Loss
4
7
4
8
dB
Reverse Isolation
30
40
35
45
dB
Output Power for 1 dB Compression (P1dB)
14
18
14
18
dBm
Saturated Output Power (Psat)
17
21
17
21
dBm
Output Third Order Intercept (IP3)
22
27
21
27
dBm
Noise Figure
10
dB
Supply Current (Idd)
300
330
300
330
mA
*Vdd = +3.5V, adjust Vgg = Vgg1, Vgg2 between -2.0 to +0.4V to achieve Idd = 300 mA typical.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC283LM1_01 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz |
| HMC283LM1_06 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz |
| HMC283LM1_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz |
| HMC284AMS8G | 功能描述:IC SWITCH SPDT DC-3.5GHZ 8-MSOP 制造商:analog devices inc. 系列:- 包装:剪带 零件状态:最後搶購 频率?- 下:DC 频率?- 上:3.5GHz 隔离 @ 频率:40dB @ 3.5GHz（标准） 插损 @ 频率:0.7dB @ 3.5GHz IIP3:50dBm（最小） 拓扑:吸收 电路:SPDT P1dB:29dBm（标准） IP1dB 特性:- 阻抗:50 欧姆 工作温度:-40°C ~ 85°C 电压 - 电源:- RF 类型:手机，ISM，PCS 封装/外壳:8-TSSOP，8-MSOP（0.118"，3.00mm 宽）裸露焊盘 供应商器件封装:8-MSOPG 标准包装:1 |
| HMC284AMS8GE | 制造商:Hittite Microwave Corp 功能描述:IC SWITCH SPDT DC-3.5GHZ 8-MSOP |
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