参数资料
型号: HMC283LM1
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 17000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: ROHS COMPLIANT, PLASTIC, SMT, 8 PIN
文件页数: 8/8页
文件大小: 320K
代理商: HMC283LM1
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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Alternate Applications:
Frequency Multiplier Performance
Voltage Detector, Built-In-Test (B.I.T.)
-10
-7
-4
-1
2
5
10
15
20
25
30
35
40
10 dBm
15 dBm
18 dBm
CONVERSION
LOSS
(dB)
OUTPUT FREQUENCY (GHz)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
10
12
14
16
18
20
22
18 GHz
22 GHz
28 GHz
38 GHz
DETECTED
VOLTAGE
IN
T
O
10K
R
ESIST
OR
(Volts
)
OUTPUT POWER (dBm)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
10
12
14
16
18
20
22
DETECTED
VOLTAGE
IN
T
O
10K
R
ESIST
OR
(Volts
)
OUTPUT POWER (dBm)
-55 C
+85 C
+25 C
HMC283LM1 can also perform as a frequency multiplier.
This is accomplished by biasing Vg1 into its pinchoff region
- typically -1V to -2V. By adjusting the Vg1 bias, the device
will operate as a doubler or tripler.
Vg2 may also be
adjusted to minimize the levels of unwanted harmonics.
The plot shows the performance of HMC283 operated as
a doubler with Vg1 = -1V and the remaining gate voltages
(Vg2, 3, 4) set to -0.15V. In this condition the amplifier
draws 310mA at 3.5V drain bias (Vdd) and provides +5dB
to -5dB conversion loss dependent upon the output fre-
quency.
By connecting the Vdet port to a 10k Ohm resistor and monitoring the voltage, a B.I.T. circuit can be created to monitor
changes in the device output power. This circuit is extremely well compensated for temperature variations as shown
in the first plot. The detected voltage does change with frequency and the second plot shows its variation.
HMC283LM1
SMT MEDIUM POWER GaAs MMIC
AMPLIFIER, 17 - 40 GHz
v04.1201
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