参数资料
型号: HMC451LP3E
厂商: Hittite Microwave Corporation
文件页数: 1/6页
文件大小: 0K
描述: IC MMIC PWR AMP 16QFN
标准包装: 1
频率: 5GHz ~ 18GHz
P1dB: 19dBm
增益: 16dB
噪音数据: 7dB
RF 型: 通用
电源电压: 5V
电流 - 电源: 150mA
封装/外壳: 16-VFQFN 裸露焊盘
包装: 标准包装
其它名称: 1127-1045-6
HMC451LP3 / 451LP3E
Typical Applications
The HmC451lp3(e) is ideal for:
? microwave radio & VsAT
? military & space
? Test equipment & sensors
v00.0808
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 18 GHz
Features
Gain: 18 dB
saturated power: +21 dBm @ 18% pAe
output ip3: +28 dBm
single supply: +5V @ 120 mA
9
? fiber optics
? lo Driver for HmC mixers
Functional Diagram
50 ohm matched input/output
16 lead 3x3mm smT package: 9mm2
General Description
The HmC451lp3(e) is an efficient GaAs pHemT
mmiC medium power Amplifier housed in a leadless
roHs compliant smT package. operating between
5 and 18 GHz, the amplifier provides 18 dB of gain,
+21 dBm of saturated power and 18% pAe from a
single +5V supply. This 50 ohm matched amplifier
does not require any external components and the
rf i/o’s are DC blocked, making it an ideal linear
gain block or lo driver for HmC mixers. The
HmC451lp3(e) eliminates the need for wire bonding,
and allows the use of surface mount manufacturing
techniques.
Electrical Specifications, T A = +25° C, Vdd 1 = Vdd 2 = +5V
parameter
min.
Typ.
max.
min.
Typ.
max.
Units
frequency range
5 - 16
16 - 18
GHz
Gain
15
18
12.5
16
dB
Gain Variation over Temperature
input return loss
output return loss
0.02
13
12
0.03
0.02
13
8
0.03
dB/ °C
dB
dB
output power for 1 dB
Compression (p1dB)
saturated output power (psat)
output Third order intercept (ip3)
noise figure
16.5
19.5
21
28
7
16
19
20
25
7
dBm
dBm
dBm
dB
supply Current (idd)
120
150
120
150
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
9-1
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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