- 您现在的位置：买卖IC网 > Datasheet目录440 > HMC451LP3E (Hittite Microwave Corporation)IC MMIC PWR AMP 16QFN Datasheet资料下载
参数资料
| 型号： | HMC451LP3E |
| 厂商： | Hittite Microwave Corporation |
| 文件页数： | 4/6页 |
| 文件大小： | 0K |
| 描述： | IC MMIC PWR AMP 16QFN |
| 标准包装： | 1 |
| 频率： | 5GHz ~ 18GHz |
| P1dB： | 19dBm |
| 增益： | 16dB |
| 噪音数据： | 7dB |
| RF 型： | 通用 |
| 电源电压： | 5V |
| 电流 - 电源： | 150mA |
| 封装/外壳： | 16-VFQFN 裸露焊盘 |
| 包装： | 标准包装 |
| 其它名称： | 1127-1045-6 |
HMC451LP3 / 451LP3E
v00.0808
Absolute Maximum Ratings
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 18 GHz
Typical Supply Current vs. Vdd 1 = Vdd 2
Drain Bias Voltage (Vdd 1 = Vdd 2 )
rf input power (rfin)(Vdd = +5Vdc)
Channel Temperature
+5.5V
+10 dBm
150 °C
Vdd 1 = Vdd 2 (V)
+4.5
+5.0
idd 1 + idd 2 (mA)
120
122
Continuous pdiss (T = 85 °C)
(derate 12.8 mw/°C above 85 °C)
0.83 w
+5.5 124
note: Amplifier will operate over full voltage range shown above
Thermal resistance
(channel to ground paddle)
storage Temperature
operating Temperature
78 °C/w
-65 to +150 °C
-40 to +85 °C
eleCTrosTATiC sensiTiVe DeViCe
oBserVe HAnDlinG preCAUTions
9
Outline Drawing
noTes:
1. leADfrAme mATeriAl: Copper AlloY
2. Dimensions Are in inCHes [millimeTers]
3. leAD spACinG TolerAnCe is non-CUmUlATiVe
4. pAD BUrr lenGTH sHAll Be 0.15mm mAXimUm.
pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm.
5. pACKAGe wArp sHAll noT eXCeeD 0.05mm.
6. All GroUnD leADs AnD GroUnD pADDle mUsT Be
solDereD To pCB rf GroUnD.
7. refer To HiTTiTe AppliCATion noTe for sUGGesTeD
lAnD pATTern.
Package Information
part number
package Body material
lead finish
msl rating
package marking [3]
HmC451lp3
HmC451lp3e
low stress injection molded plastic
roHs-compliant low stress injection molded plastic
sn/pb solder
100% matte sn
msl1
msl1
[1]
[2]
451
XXXX
451
XXXX
[1] max peak reflow temperature of 235 °C
[2] max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9-4
相关PDF资料 |
PDF描述 |
|---|---|
| HMC478SC70E | IC GAIN BLOCK AMP SC70 |
| HMC516LC5 | IC AMP LNA 9-18GHZ 5X5QFN |
| HMC536MS8GE | IC MMIC GAAS SW SPST 8MSOP |
| HMC544E | IC MMIC GAAS SW SPDT SOT26 |
| HMC545E | IC MMIC GAAS SW SPDT SOT26 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC451LP3ETR | 制造商:Hittite Microwave Corp 功能描述:IC MMIC PWR AMP 16QFN 制造商:Hittite Microwave Corp 功能描述:HMC451 Series 5 - 18 GHz GaAs PHEMT MMIC Medium Power Amplifier - QFN-16 制造商:Hittite Microwave Corp 功能描述:medium power amp, 5-18ghz |
| HMC451-SX | 功能描述:RF Amplifier IC General Purpose 5GHz ~ 20GHz Die 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:要求报价 频率:5GHz ~ 20GHz P1dB:19dBm 增益:18dB 噪声系数:6.5dB RF 类型:通用 电压 - 电源:5V 电流 - 电源:114mA 测试频率:15GHz ~ 18GHz 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
| HMC452QS16G | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz |
| HMC452QS16G_06 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz |
| HMC452QS16G_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz |
发布紧急采购，3分钟左右您将得到回复。