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| 型号： | HMC462 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 2000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 3.12 X 1.38 MM, 0.10 MM, DIE-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 414K |
| 代理商： | HMC462 |
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC462
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
v04.1210
General Description
Features
Functional Diagram
The hmC462 is a GaAs mmiC phemT low noise
Distributed Amplifier die which operates between 2
and 20 Ghz. The amplifier provides 15 dB of gain, 2.0
to 2.5 dB noise figure and +15 dBm of output power at
1 dB gain compression while requiring only 63 mA
from a single +5V supply. Gain flatness is excellent at
±0.5 dB from 6 - 18 Ghz making the hmC462 ideal
for ew, eCm and rADAr applications. The hmC462
requires a single supply of +5V @ 63 mA and is the
self-biased version of the hmC463. The wideband
amplifier i/os are internally matched to 50 ohms
facilitating easy integration into multi-Chip-modules
(mCms). All data is with the chip in a 50 ohm test
fixture connected via 0.025mm (1 mil) diameter wire
bonds of minimal length 0.31mm (12 mils).
noise figure: 2 dB @ 10 Ghz
Gain: 15 dB
p1dB output power: +15 dBm @ 10 Ghz
self-Biased: +5V @ 63 mA
50 ohm matched input/output
Die size: 3.12 x 1.38 x 0.1 mm
Typical Applications
The hmC462 wideband lnA is ideal for:
Telecom infrastructure
microwave radio & VsAT
military & space
Test instrumentation
fiber optics
Electrical Specifications, T
A = +25° C, Vdd= 5V
parameter
min.
Typ.
max.
min.
Typ.
max.
min.
Typ.
max.
Units
frequency range
2.0 - 6.0
6.0 - 18.0
18.0 - 20.0
Ghz
Gain
13.5
15.5
13
15
12
14
dB
Gain flatness
±0.5
dB
Gain Variation over Temperature
0.015
0.025
0.015
0.025
0.015
0.025
dB/ °C
noise figure
3.0
4.0
2.5
3.5
3.0
3.7
dB
input return loss
15
20
14
dB
output return loss
12
13
8
dB
output power for 1 dB Compression (p1dB)
12.5
15.5
11
14
9.5
12.5
dBm
saturated output power (psat)
18
16
15.5
dBm
output Third order intercept (ip3)
26.5
25.5
24
dBm
supply Current
(idd) (Vdd= 5V)
63
84
63
84
63
84
mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC462_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz |
| HMC462LP5 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz |
| HMC462LP5_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz |
| HMC462LP5E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC LNA GAAS PHEMT 32-QFN |
| HMC462LP5ETR | 制造商:Hittite Microwave Corp 功能描述:IC MMIC LNA GAAS PHEMT 32-QFN |
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