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参数资料
| 型号： | HMC595E |
| 厂商： | Hittite Microwave Corporation |
| 文件页数： | 6/8页 |
| 文件大小： | 0K |
| 描述： | IC MMIC GAAS SW SPDT SOT26 |
| 标准包装： | 1 |
| RF 型： | 通用 |
| 频率： | 0Hz ~ 3GHz |
| 特点： | SPDT |
| 封装/外壳： | SOT-23-6 |
| 供应商设备封装： | SOT-26 |
| 包装： | 标准包装 |
| 其它名称： | 1127-1060-6 |
HMC595 / 595E
v00.0805
GaAs MMIC 3 WATT T/R SWITCH,
DC - 3 GHz
Pin Descriptions
Pin Number
1, 3, 5
2
4
6
Function
RF2, RF1, RFC
GND
B
A
Description
This pin is DC coupled and matched to 50 Ohm.
Blocking capacitors are required.
This pin must be connected to RF/DC ground.
See truth table and control voltage table.
See truth table and control voltage table.
Interface Schematic
10
Typical Application Circuit
Notes:
1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of +3 to +8 Volts applied to the CMOS logic gates.
3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation.
4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower RF power
capability) at bias voltages down to +3V.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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相关代理商/技术参数 |
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|---|---|
| HMC595ETR | 制造商:Hittite Microwave Corp 功能描述:IC MMIC GAAS SW SPDT SOT26 制造商:Hittite Microwave Corp 功能描述:HMC595 Series DC - 3.0 GHz GaAs MMIC 5 Watt T/R Switch - SOT-26-6 |
| HMC596LP4 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:SMT CMOS 4x2 SWITCH MATRIX, 0.2 - 3.0 GHz |
| HMC596LP4_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:SMT CMOS 4x2 SWITCH MATRIX, 0.2 - 3.0 GHz |
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| HMC596LP4ETR | 功能描述:RF Switch IC Cellular 3GHz 50 Ohm 24-QFN (4x4) 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:有效 频率?- 下:200MHz 频率?- 上:3GHz 隔离 @ 频率:40dB @ 3GHz（标准） 插损 @ 频率:7.5dB @ 3GHz IIP3:27dBm（标准） 拓扑:- 电路:- P1dB:22dBm 特性:- 阻抗:50 欧姆 工作温度:-40°C ~ 85°C 电压 - 电源:5V RF 类型:手机 封装/外壳:24-VFQFN 裸露焊盘 供应商器件封装:24-QFN（4x4） 标准包装:1 |
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