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| 型号： | HMC741ST89E |
| 厂商： | Hittite Microwave Corporation |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | IC GAIN BLOCK AMP SOT89 |
| 标准包装： | 1 |
| 频率： | 50MHz ~ 3GHz |
| P1dB： | 16dBm |
| 增益： | 19dB |
| 噪音数据： | 2.5dB |
| RF 型： | 通用 |
| 电源电压： | 5V |
| 电流 - 电源： | 96mA |
| 封装/外壳： | TO-243AA |
| 包装： | 标准包装 |
| 其它名称： | 1127-1067-6 |
HMC741ST89E
v02.0710
InGaP HBT ACTIVE BIAS
MMIC AMPLIFIER, 0.05 – 3 GHz
8
Typical Applications
The Hmc741sT89e is ideal for:
? cellular/3G & WimAX/4G
? fixed Wireless & WlAn
? cATv, cable modem & DBs
? microwave radio & Test equipment
? if & rf Applications
Functional Diagram
Features
p1dB output power: +18.5 dBm
Gain: 20 dB
output ip3: +42 dBm
cascadable 50 ohm i/os
single supply: +5v
industry standard soT89 package
robust 1000v esD, class 1c
stable current over Temperature
Active Bias network
General Description
The Hmc741sT89e is an inGap Heterojunction
Bipolar Transistor (HBT) Gain Block mmic smT
amplifier covering 0.05 to 3 GHz. packaged in an
industry standard soT89, the amplifier can be used
as a cascadable 50 ohm rf or if gain stage as well
as a pA or lo driver with up to +18.5 dBm output
power. The Hmc741sT89e offers 20 dB of gain with
a +42 dBm output ip3 at 200 mHz, and can operate
directly from a +5v supply. The Hmc741sT89e
exhibits excellent gain and output power stability over
temperature, while requiring a minimal number of
external bias components.
Electrical Specifications, Vcc = 5V, T A = +25° C
parameter
min.
Typ.
max.
min.
Typ.
max.
min.
Typ.
max.
min.
Typ.
max.
Units
frequency range
150
240
5 0 - 100 0
5 0 - 300 0
mHz
Gain
19
20
19
21
16
20
12
19
dB
Gain flatness
±0.3
±0.3
±0.3
±2.6
dB
Gain variation over Temperature
input return loss
output return loss
reverse isolation
0.004
16
17
25
0.004
16
17
25
0.004
16
17
25
0.01
0.004
12
12
26
0.01
dB/ °c
dB
dB
dB
output power for 1 dB compression
(p1dB)
16
18.8
16
18.8
16
18.8
14
16
dBm
output Third order intercept (ip3)
(pout= 0 dBm per tone,
40.5
40.5
40.5
30
dBm
1 mHz spacing)
noise figure
supply current (icq)
2.5
96
2.5
96
2.5
96
2.5
96
dB
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
8-1
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC741ST89E_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 a?? 3 GHz |
| HMC741ST89ETR | 制造商:Hittite Microwave Corp 功能描述:IC GAIN BLOCK AMP SOT89 |
| HMC742ALP5E | 功能描述:RF Amplifier IC LTE, WiMax 70MHz ~ 4GHz 32-QFN (5x5) 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:有效 频率:70MHz ~ 4GHz P1dB:21.5dBm 增益:12dB 噪声系数:4dB RF 类型:LTE，WiMax 电压 - 电源:5V 电流 - 电源:2.5mA 测试频率:70MHz ~ 1GHz 封装/外壳:32-VFQFN 裸露焊盘 供应商器件封装:32-QFN（5x5） 标准包装:1 |
| HMC742ALP5ETR | 功能描述:RF Amplifier IC LTE, WiMax 70MHz ~ 4GHz 32-QFN (5x5) 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:停产 频率:70MHz ~ 4GHz P1dB:21.5dBm 增益:12dB 噪声系数:4dB RF 类型:LTE，WiMax 电压 - 电源:5V 电流 - 电源:2.5mA 测试频率:70MHz ~ 1GHz 封装/外壳:32-VFQFN 裸露焊盘 供应商器件封装:32-QFN（5x5） 标准包装:1 |
| HMC742HFLP5E | 制造商:Hittite Microwave Corp 功能描述:IC AMP DVGA 6-BIT 0.5DB 32-QFN |
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