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| 型号： | HMC636ST89E |
| 厂商： | Hittite Microwave Corporation |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | IC GAIN BLOCK AMP SOT89 |
| 标准包装： | 1 |
| 频率： | 200MHz ~ 4GHz |
| P1dB： | 23dBm |
| 增益： | 10dB |
| 噪音数据： | 2dB |
| RF 型： | 通用 |
| 电源电压： | 5V |
| 电流 - 电源： | 175mA |
| 封装/外壳： | TO-243AA |
| 包装： | 标准包装 |
| 其它名称： | 1127-1063-6 |
HMC636ST89 / 636ST89E
Typical Applications
The HMC636ST89(E) is ideal for:
? Cellular / PCS / 3G
? WiMAX, WiBro, & Fixed Wireless
? CATV & Cable Modem
v02.0311
GaAs PHEMT HIGH LINEARITY
Gain Block, 0.2 - 4.0 GHz
Features
Low Noise Figure: 2.2 dB
High P1dB Output Power: +22 dBm
High Output IP3: +40 dBm
Gain: 13 dB
9
? Microwave Radio
Functional Diagram
50 Ohm I/O’s - No External Matching
Industry Standard SOT89 Package
General Description
The HMC636ST89(E) is a GaAs pHEMT, High
Linearity, Low Noise, Wideband Gain Block Amplifier
covering 0.2 to 4.0 GHz. Packaged in an industry
standard SOT89, the amplifier can be used as either
a cascadable 50 Ohm gain stage, a PA Pre-Driver, a
Low Noise Amplifier, or a Gain Block with up to +23
dBm output power. This versatile Gain Block Amplifier
is powered from a single +5V supply and requires no
external matching components The internally matched
topology makes this amplifier compatible with virtually
any PCB material or thickness.
Electrical Specifications, Vs= 5.0 V, T A = +25° C
Parameter
Min
Typ.
Max
Min.
Typ.
Max.
Units
Frequency Range
0.2 - 2.0
2.0 - 4.0
GHz
Gain
10
13
5
10
dB
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
0.01
10
13
22
0.02
0.01
10
15
20
0.02
dB/ °C
dB
dB
dB
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
19
36
22
39
2.5
155
20
36
23
39
2
155
175
dBm
dBm
dB
mA
Note: Data taken with broadband bias tee on device output.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
9-1
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC636ST89ETR | 制造商:Hittite Microwave Corp 功能描述:IC GAIN BLOCK AMP SOT89 |
| HMC637 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz |
| HMC637A | 功能描述:RF Amplifier IC VSAT 0Hz ~ 6GHz 32-QFN (4x4) 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:新产品 频率:0Hz ~ 6GHz P1dB:29dBm 增益:13dB 噪声系数:12dB RF 类型:VSAT 电压 - 电源:5V 电流 - 电源:400mA 测试频率:- 封装/外壳:32-VQFN 裸露焊盘 供应商器件封装:32-QFN（4x4） 标准包装:25 |
| HMC637ALP5E | 功能描述:RF Amplifier IC General Purpose 0Hz ~ 6GHz 32-QFN (5x5) 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:有效 频率:0Hz ~ 6GHz P1dB:29dBm 增益:13dB 噪声系数:5dB RF 类型:通用 电压 - 电源:12V 电流 - 电源:400mA 测试频率:- 封装/外壳:32-VFQFN 裸露焊盘 供应商器件封装:32-QFN（5x5） 标准包装:1 |
| HMC637ALP5ETR | 功能描述:IC MMIC MESFET GAAS 1W 32QFN 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:在售 频率:0Hz ~ 6GHz P1dB:29dBm 增益:13dB 噪声系数:5dB RF 类型:VSAT 电压 - 电源:12V 电流 - 电源:400mA 测试频率:- 封装/外壳:32-VFQFN 裸露焊盘 供应商器件封装:32-QFN（5x5） 标准包装:1 |
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