参数资料
型号: HMC636ST89E
厂商: Hittite Microwave Corporation
文件页数: 4/6页
文件大小: 0K
描述: IC GAIN BLOCK AMP SOT89
标准包装: 1
频率: 200MHz ~ 4GHz
P1dB: 23dBm
增益: 10dB
噪音数据: 2dB
RF 型: 通用
电源电压: 5V
电流 - 电源: 175mA
封装/外壳: TO-243AA
包装: 标准包装
其它名称: 1127-1063-6
HMC636ST89 / 636ST89E
v02.0311
GaAs PHEMT HIGH LINEARITY
Gain Block, 0.2 - 4.0 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+5.5 Volts
RF Input Power (RFIN)(Vcc = +5 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 13.3 mW/°C above 85 °C)
Thermal Resistance
(Channel to lead)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+16 dBm
150 °C
0.86 W
75.6 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
9
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL:
MOLDING COMPOUND MP-180S OR EQUIVALENT.
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING.
3. LEAD PLATING: 100% MATTE TIN.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
Package Marking [3]
HMC636ST89
HMC636ST89E
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Sn/Pb Solder
100% matte Sn
MSL1
MSL1
[1]
[2]
H636
XXXX
H636
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9-4
相关PDF资料
PDF描述
HMC741ST89E IC GAIN BLOCK AMP SOT89
HMC753LP4E IC AMP MMIC GAAS LN 24QFN
HMC784MS8GE IC MMIC GAAS SW SPDT 8MSOP
HMC788LP2E IC GAIN BLOCK AMP 6DFN
HMC849LP4CE IC SW GASS PHEMT SPDT 16QFN
相关代理商/技术参数
参数描述
HMC636ST89ETR 制造商:Hittite Microwave Corp 功能描述:IC GAIN BLOCK AMP SOT89
HMC637 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz
HMC637A 功能描述:RF Amplifier IC VSAT 0Hz ~ 6GHz 32-QFN (4x4) 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:新产品 频率:0Hz ~ 6GHz P1dB:29dBm 增益:13dB 噪声系数:12dB RF 类型:VSAT 电压 - 电源:5V 电流 - 电源:400mA 测试频率:- 封装/外壳:32-VQFN 裸露焊盘 供应商器件封装:32-QFN(4x4) 标准包装:25
HMC637ALP5E 功能描述:RF Amplifier IC General Purpose 0Hz ~ 6GHz 32-QFN (5x5) 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:有效 频率:0Hz ~ 6GHz P1dB:29dBm 增益:13dB 噪声系数:5dB RF 类型:通用 电压 - 电源:12V 电流 - 电源:400mA 测试频率:- 封装/外壳:32-VFQFN 裸露焊盘 供应商器件封装:32-QFN(5x5) 标准包装:1
HMC637ALP5ETR 功能描述:IC MMIC MESFET GAAS 1W 32QFN 制造商:analog devices inc. 系列:- 包装:剪切带(CT) 零件状态:在售 频率:0Hz ~ 6GHz P1dB:29dBm 增益:13dB 噪声系数:5dB RF 类型:VSAT 电压 - 电源:12V 电流 - 电源:400mA 测试频率:- 封装/外壳:32-VFQFN 裸露焊盘 供应商器件封装:32-QFN(5x5) 标准包装:1