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参数资料
| 型号： | HMC659 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 15000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 3.115 X 1.63 MM, 0.10 MM HEIGHT, DIE-7 |
| 文件页数： | 1/8页 |
| 文件大小： | 290K |
| 代理商： | HMC659 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC659
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 15 GHz
v01.0708
General Description
Features
Functional Diagram
The HMC659 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC and
15 GHz. The amplifier provides 19 dB of gain,
+35 dBm output IP3 and +26.5 dBm of output power
at 1 dB gain compression while requiring 300 mA
from a +8V supply. Gain flatness is excellent at ±0.5
dB from DC to 10 GHz making the HMC659 ideal for
EW, ECM, Radar and test equipment applications.
The HMC659 amplifier I/Os are internally matched
to 50 ohms facilitating integration into Mutli-Chip-
Modules (MCMs). All data is taken with the chip
connected via two 0.025mm (1 mil) wire bonds of mini-
mal length 0.31 mm (12 mils).
P1dB Output Power: +26.5 dBm
Gain: 19 dB
Output IP3: +35 dBm
Supply Voltage: +8V @ 300 mA
50 Ohm Matched Input/Output
Die Size: 3.115 x 1.630 x 0.1 mm
Typical Applications
The HMC659 is ideal for:
Telecom Infrastructure
Microwave Radio & VSAT
Military & Space
Test Instrumentation
Fiber Optics
Electrical Specifications, T
A = +25° C, Vdd= +8V, Vgg2= +3V, Idd= 300 mA*
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
DC - 6
6 - 11
11 - 15
GHz
Gain
16.1
19.1
15.5
18.5
14.8
17.8
dB
Gain Flatness
±0.5
±0.15
±0.6
dB
Gain Variation Over Temperature
0.013
0.018
0.025
dB/ °C
Input Return Loss
19
17
15
dB
Output Return Loss
18
17
15
dB
Output Power for 1 dB Compression (P1dB)
23
25.5
24
26.5
22.5
25
dBm
Saturated Output Power (Psat)
26
27
dBm
Output Third Order Intercept (IP3)
35
32
29
dBm
Noise Figure
2.5
2
3
dBc
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.8V Typ.)
300
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 300 mA typical.
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| HMC659_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz |
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| HMC65DRAH | 功能描述:CONN EDGECARD 130PS R/A .100 SLD RoHS:是 类别:连接器，互连式 >> Card Edge 系列:- 标准包装:1 系列:- 卡类型:非指定 - 双边 类型:母头 Number of Positions/Bay/Row:36 位置数:72 卡厚度:0.062"（1.57mm） 行数:2 间距:0.100"（2.54mm） 特点:- 安装类型:面板安装 端子:焊接孔眼 触点材料:磷青铜 触点表面涂层:金 触点涂层厚度:10µin（0.25µm） 触点类型：:全波纹管 颜色:蓝 包装:管件 法兰特点:顶部安装开口，螺纹插件，4-40 材料 - 绝缘体:聚对苯二甲酸丁二酯（PBT） 工作温度:-65°C ~ 125°C 读数:双 |
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