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参数资料
| 型号： | HMC659 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 15000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 3.115 X 1.63 MM, 0.10 MM HEIGHT, DIE-7 |
| 文件页数： | 6/8页 |
| 文件大小： | 290K |
| 代理商： | HMC659 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC659
v01.0708
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 15 GHz
Pad Number
Function
Description
Interface Schematic
1IN
This pad is DC coupled and matched
to 50 Ohms. Blocking capacitor is required.
2Vgg2
Gate control 2 for amplifier. Attach bypass
capacitor per application circuit herein. For nominal
operation +3V should be applied to Vgg2.
3ACG1
Low frequency termination. Attach bypass
capacitor per application circuit herein.
4ACG2
Low frequency termination. Attach bypass
capacitor per application circuit herein.
5
OUT & Vdd
RF output for amplifier. Connect DC bias (Vdd) network to
provide drain current (Idd). See application circuit herein.
7ACG3
Low frequency termination. Attach bypass
capacitor per application circuit herein.
6Vgg1
Gate control 1 for amplifier. Attach bypass
capacitor per application circuit herein. Please
follow “MMIC Amplifier Biasing Procedure”
application note.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Pad Descriptions
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| HMC65DRAH | 功能描述:CONN EDGECARD 130PS R/A .100 SLD RoHS:是 类别:连接器，互连式 >> Card Edge 系列:- 标准包装:1 系列:- 卡类型:非指定 - 双边 类型:母头 Number of Positions/Bay/Row:36 位置数:72 卡厚度:0.062"（1.57mm） 行数:2 间距:0.100"（2.54mm） 特点:- 安装类型:面板安装 端子:焊接孔眼 触点材料:磷青铜 触点表面涂层:金 触点涂层厚度:10µin（0.25µm） 触点类型：:全波纹管 颜色:蓝 包装:管件 法兰特点:顶部安装开口，螺纹插件，4-40 材料 - 绝缘体:聚对苯二甲酸丁二酯（PBT） 工作温度:-65°C ~ 125°C 读数:双 |
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