- 您现在的位置：买卖IC网 > PDF目录67681 > HMC714LP5E (HITTITE MICROWAVE CORP) 100 MHz - 5800 MHz RF/MICROWAVE LINEAR DETECTOR, 15 dBm INPUT POWER-MAX PDF资料下载
参数资料
| 型号： | HMC714LP5E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 检测器 |
| 英文描述： | 100 MHz - 5800 MHz RF/MICROWAVE LINEAR DETECTOR, 15 dBm INPUT POWER-MAX |
| 封装： | 5 X 5 MM, ROHS COMPLIANT, PLASTIC, SMT, 32 PIN |
| 文件页数： | 30/40页 |
| 文件大小： | 1985K |
| 代理商： | HMC714LP5E |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页当前第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
P
O
W
E
R
D
E
T
E
C
T
O
R
S
-
SM
T
12
12 - 161
The INSA and INSB are envelope detector outputs for A & B channels that provide a measurement of instantaneous
signal power normalized average power. This feature is called Instantaneous Peak to Average Ratio (iPAR). The iPAR
makes peak-to-average power comparisons immediately obvious. This simultaneous measurement of envelope power
and average power in HMC714LP5E has two fundamental advantages over traditional methods of which employ two
different power detectors working in parallel.
Both the iPAR and RMS detectors share the same measurement structures, and
Both the iPAR and RMS detectors share the same temperature compensation mechanisms.
With traditional implementation of peak-to-average power detection, the dominant source of errors is due to the
uncorrelated measurement deviations between the two separate detectors. Both detectors in the HMC714LP5E share
the same circuits (INSA-RMSA pair and INSB-RMSB pair), so any deviations, however small, are fully correlated.
The iPAR feature can be configured to provide two major functions:
1. A measurement of instantaneous signal power normalized to average power
In this most basic measurement mode, INSA (INSB) output is terminated to ground using an
external resistor which forms an output buffer with the internal transistor Q1 connected in
emitter-follower configuration. With Rext = 3.9 kOhm (R20 and R12 on the evaluation board
for A & B channels), INSA (INSB) output can track the input envelope up to a modulation
bandwidth of 35 MHz at which point the output swing drops by 50%. For an unmodulated input
signal with f>>35 MHz, the INSA (INSB) output will provide a constant value of approximately
1.6V indicating that the instantaneous power is equal to the average power.
The INSA (INSB) output voltages linearly follow the instantaneous power levels at the
detector input with the transfer gain scaled by an external voltage applied to VTGT (pin 28).
For a nominal voltage of 2V on VTGT the scaling factor of the INSA (INSB) output is 200 mV.
INS[A,B] = IREF[A,B] + SF*(EAR[A,B] - 1)
where IREF[A,B] = (VCC[A,B]*REXT) /( 3*(REXT+65 Ohm)) ≈ 1.6 V (for VCC = 5V, REXT = 2 kΩ)
where EAR[A,B] = input signal RF AM envelope-to-average power ratio on channel [A,B]
and SF = the scaling factor set by an external voltage applied to VTGT (200 mV when VTGT = 2.0V)
For example, the INSA (INSB) voltage will drop to 1.4 V (1.6-0.2V) when the input power instantaneously drops to zero,
and will increase to 2.2V (1.6+0.2*3) when the input power instantaneously increases to 4 times the average power.
With lower VTGT values the scaling factor also decreases, allowing INSA (INSB) to linearly track larger swings of input
power.
iPAR – Envelope Power Normalized To Average Power
0.25
0.75
1.25
1.75
2.25
-0.5
0
0.5
1
1.5
012345
IN
S
[A,B]
(V)
INPUT
RF
SIGNAL
ENVELOPE
(V)
Time (usec)
IPAR Output
Input RF Signal Envelope
iPAR Output & Input RF Signal Envelope
vs. Time for an Input Crest Factor of
9.03 dB @ 1900 MHz [1]
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
02468
10
12
=Pin/Pav*0.2+(1.6-0.2)
IPWR Output VTGT = 2V
=Pin/Pav*0.1+(1.6-0.1)
IPWR Output VTGT = 1V
IPW
R
OU
T
P
U
T
(V)
INSTANTANEOUS INPUT POWER
(NORMALIZED TO AVERAGE POWER)
IPWR(t) = (VTGT/10)x(Pin(t)/Pavg)+(1.6-(Vtgt/10))
INS [A,B] Output vs. Instantaneous
Input Power (Normalized to Average
Power)
HMC714LP5 / 714LP5E
v07.1109
DUAL RMS POWER DETECTOR
0.1 - 5.8 GHz
[1] Differential Input Configuration with baluns, RF Input Power @ -20 dBm
相关PDF资料 |
PDF描述 |
|---|---|
| HMC742LP5 | 70 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMC770LP4BE | 40 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMC789ST89E | 700 MHz - 2800 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMC815LC5 | 21000 MHz - 27000 MHz RF/MICROWAVE UP CONVERTER |
| HMC909LP4E | 0 MHz - 5800 MHz RF/MICROWAVE LINEAR DETECTOR, 10 dBm INPUT POWER-MAX |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC7150LP3DE | 功能描述:RF Modulator IC 16-VFQFN Exposed Pad 制造商:analog devices inc. 系列:- 包装:剪带 零件状态:有效 功能:- LO 频率:- RF 频率:- P1dB:- 本底噪声:* 输出功率:- 电流 - 电源:- 电压 - 电源:6V 测试频率:- 封装/外壳:16-VFQFN 裸露焊盘 标准包装:1 |
| HMC715LP3 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz |
| HMC715LP3E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA PHEMT 16-QFN |
| HMC716LP3 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9 GHz |
| HMC716LP3E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA PHEMT 16-QFN |
发布紧急采购，3分钟左右您将得到回复。