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参数资料
| 型号： | HMC714LP5E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 检测器 |
| 英文描述： | 100 MHz - 5800 MHz RF/MICROWAVE LINEAR DETECTOR, 15 dBm INPUT POWER-MAX |
| 封装： | 5 X 5 MM, ROHS COMPLIANT, PLASTIC, SMT, 32 PIN |
| 文件页数： | 31/40页 |
| 文件大小： | 1985K |
| 代理商： | HMC714LP5E |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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The INSA (INSB) output is highly independent from input signal frequency, input average power, and temperature.
Proprietary design techniques assure very little part-to-part variation and maintain a very high degree of match
between channels.
2. A measurement of peak-power normalized to average power
To measure peak power, a peak-hold mechanism is required at the INSA (INSB) output. The
peak-hold circuit can be as simple as an RC combination on the INSA (INSB) pin. In this
configuration, peak excursions of the input signal is stored as a peak voltage on the external
Cext capacitor. Rext is used to set the quiescent bias point of Q1, and together with Cext
will for a time-constant for the peak-hold function. The larger Cext is the longer the peak-
detector will “remember” the largest signal excursion; conversely a smaller value of Cext will
result in a shorter memory, and less filtering. The value of Rext for this “peak-power” mode
of the iPAR function should be much larger than the value used for the iPAR mode described
previously (instantaneous power tracking mode) to extend the RextCext time-constant.
INS[A,B] = IREF[A,B] + SF*(PAR[A,B] - 1)
where IREF[A,B] = VCC[A,B] / 3 + 0.15V ≈ 1.82V (for VCC = 5V, REXT = 500 kΩ)
where PAR[A,B] = input signal peak-to-average ratio on channel [A,B]
and SF = the scaling factor set by an external voltage applied to VTGT (150 mV when VTGT = 2.0V)
The graphs below describes the INSA (INSB) peak-hold levels as a function of input peak-to-average ratio (PAR) and
also crest factor. Note how the voltage applied at VTGT affects the INSA (INSB) reading. The voltage applied to the
VTGT pin also has a secondary effect on crest-factor performance. The VTGT signal optimizes internal bias points for
measurement accuracy at higher crest factors: refer to the section under “Adjusting VTGT for greater precision” for a
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INSA
Linear Fit
PEAK TO AVERAGE POWER RATIO (PAR)
INSA
(V)
VTGT=2V
VTGT=1V
Single Tone (CW) Inputs
1.6
1.8
2
2.2
2.4
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3.2
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VTGT=2V Rext=100kohm
VTGT=2V Rext=500kohm
VTGT=1V Rext=500kohm
INPUT CREST FACTOR (dB)
INSA
(V)
256QAM (1Mbps)
Crest Factor~7.8dB
Single Tone
(CW) Inputs
iPAR Feature Peak-to-Average Power
Detection Configuration (REXT = 500Ω,
CEXT = 100 nF)
iPAR Feature Peak-to-Average Power
Detection Configuration vc Crest Factor
(CEXT = 100 nF)
PAR – Envelope Power Normalized To Average Power (Continued)
HMC714LP5 / 714LP5E
v07.1109
DUAL RMS POWER DETECTOR
0.1 - 5.8 GHz
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