参数资料
型号: HMC714LP5E
厂商: HITTITE MICROWAVE CORP
元件分类: 检测器
英文描述: 100 MHz - 5800 MHz RF/MICROWAVE LINEAR DETECTOR, 15 dBm INPUT POWER-MAX
封装: 5 X 5 MM, ROHS COMPLIANT, PLASTIC, SMT, 32 PIN
文件页数: 32/40页
文件大小: 1985K
代理商: HMC714LP5E
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
P
O
W
E
R
D
E
T
E
C
T
O
R
S
-
SM
T
12
12 - 163
Standby Mode
The ENX can be used to force the power detector into a low-power standby mode. In this mode, the entire power
detector is powered-down. As ENX is deactivated, power is restored to all of the circuits. There is no memory of
previous conditions. Coming-out of stand-by, CINT and COFS capacitors will require recharging, so if large capacitor
values have been chosen, the wake-up time will be lengthened.
DC Offset Compensation Loop
Internal DC offsets, which are input signal dependant, require continuous cancellation. Offset cancellation is a critical
function needed for maintenance of measurement accuracy and sensitivity. The DC offset cancellation loop performs
this function, and its response is largely defined by the capacitance off. Setting DC offset cancellation, loop bandwidth
strives to strike a balance between offset cancellation accuracy, and loop response time. A larger value of COFS results
in a more precise offset cancellation, but at the expense of a slower offset cancellation response. A smaller value of
COFS tilts the performance trade-off towards a faster offset cancellation response. The optimal loop bandwidth setting
will allow internal offsets to be cancelled at a minimally acceptable speed.
full description on crest factor optimization.
iPAR Reference Outputs: IREFA & IREFB
HMC714LP5E also provides two reference voltage outputs, IREFA (pin 26) and IREFB (pin 15) for A & B channels,
which when used with the INSA/INSB outputs allows cancellation of temperature and supply related variations of the
INSA/INSB DC offsets. INSA/INSB DC offsets are equal to the IREFA/IREFB reference voltages, and these levels
corresponds to the envelope-to-average ratio (EAR) or peak-to-average ratio (PAR) of an unmodulated carrier (CW-
tone crest factor = 3 dB). For the best cancellation of the effects of temperature and supply voltage on INSA/INSB DC
offsets, load both the INSA/INSB and IREFA/IREFB outputs with an equivalent RC network.
Propagation Delay of INSA & INSB
The proper operation of the iPAR feature depends on
the proper settling of the RMS outputs because both
the iPAR feature and the RMS detection feature share
the same internal structures. After internal mechanisms
of the detector have settled, the RMS outputs (RMSA &
RMSB) provide a reading of input average power while
iPAR outputs (INSA & INSB) provides the instantaneous
(or peak) power value of the input signal. There is of
course some finite propagation delay from the instant of
input power change to the change of INSA (INSB). That
propagation delay is defined by the external capacitor,
Cext. The figure illustrates the propagation delay from a
900 MHz, 6-tone (multi-carrier) input signal at -10 dBm
average power to the INSA output of HMC714LP5E. As
illustrated, the propagation delay is 26 nsec with the
detector configured with the wideband, single-ended
input interface. The use of the differential input interface
with the balun increases the propagation delay to 37
nsec under similar test conditions.
PAR – Envelope Power Normalized To Average Power (Continued)
-0.2
-0.15
-0.1
-0.05
0
0.05
0.1
0.15
0.2
0
0.36
0.71
1.07
1.42
1.78
2.14
2.49
2.85
-150
-100
-50
0
50
100
150
200
250
Input
Signal
Envelope
(V)
INSA
(V)
Vpd (Vdc)
26nS
Propagation Delay with Wideband
Single Ended Input Interface
HMC714LP5 / 714LP5E
v07.1109
DUAL RMS POWER DETECTOR
0.1 - 5.8 GHz
相关PDF资料
PDF描述
HMC742LP5 70 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
HMC770LP4BE 40 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
HMC789ST89E 700 MHz - 2800 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
HMC815LC5 21000 MHz - 27000 MHz RF/MICROWAVE UP CONVERTER
HMC909LP4E 0 MHz - 5800 MHz RF/MICROWAVE LINEAR DETECTOR, 10 dBm INPUT POWER-MAX
相关代理商/技术参数
参数描述
HMC7150LP3DE 功能描述:RF Modulator IC 16-VFQFN Exposed Pad 制造商:analog devices inc. 系列:- 包装:剪带 零件状态:有效 功能:- LO 频率:- RF 频率:- P1dB:- 本底噪声:* 输出功率:- 电流 - 电源:- 电压 - 电源:6V 测试频率:- 封装/外壳:16-VFQFN 裸露焊盘 标准包装:1
HMC715LP3 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz
HMC715LP3E 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA PHEMT 16-QFN
HMC716LP3 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9 GHz
HMC716LP3E 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA PHEMT 16-QFN