参数资料
型号: HMC715LP3
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 2100 MHz - 2900 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
封装: 3 X 3 MM, PLASTIC, SMT, QFN-16
文件页数: 4/10页
文件大小: 739K
代理商: HMC715LP3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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m
T
7
7 - 3
P1dB vs. Temperature [1] [2]
Psat vs. Temperature [1] [2]
10
12
14
16
18
20
22
24
2
2.2
2.4
2.6
2.8
3
+25C
+85C
-40C
FREQUENCY (GHz)
Psat
(dBm)
Vdd=5V
Vdd=3V
9
11
13
15
17
19
21
23
2
2.2
2.4
2.6
2.8
3
+25C
+85C
-40C
FREQUENCY (GHz)
P1dB
(dBm)
Vdd=5V
Vdd=3V
HMC715LP3 / 715LP3E
v01.0808
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.1 - 2.9 GHz
Output IP3 and Supply Current vs.
Supply Voltage @ 2300 MHz [3]
[1] Vdd = 5V, rbias = 2k Ω [2] Vdd = 3V, rbias = 47kΩ
[3] rbias = 2kΩ for Vdd = 5V, rbias = 47kΩ for Vdd = 3V [4] measurement reference plane shown on evaluation pCB drawing.
Output IP3 vs. Temperature [1] [2]
20
23
26
29
32
35
38
41
44
2
2.2
2.4
2.6
2.8
3
+25C
+85C
-40C
FREQUENCY (GHz)
IP3
(dBm
)
Vdd=5V
Vdd=3V
20
22
24
26
28
30
32
34
36
5
20
35
50
65
80
95
110
125
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
IP3
(dBm
)
Idd
(mA)
Voltage Supply (V)
Idd
IP3
Noise Figure vs. Temperature [1] [2] [4]
0
0.3
0.6
0.9
1.2
1.5
1.8
2
2.2
2.4
2.6
2.8
3
Vdd=5V
Vdd=3V
FREQUENCY (GHz)
NOISE
FIGURE
(dB)
+85C
+25C
-40C
Output IP3 and Supply Current vs.
Supply Voltage @ 2700 MHz [3]
22
24
26
28
30
32
34
36
38
5
20
35
50
65
80
95
110
125
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
IP3
(dBm
)
Idd
(mA)
Voltage Supply (V)
Idd
IP3
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