参数资料
型号: HMC719LP4ETR
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 1300 MHz - 2900 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: 4 X 4 MM, ROHS COMPLIANT, PLASTIC, SMT, 24 PIN
文件页数: 4/10页
文件大小: 715K
代理商: HMC719LP4ETR
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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7
7 - 3
P1dB vs. Temperature [1] [2]
Psat vs. Temperature [1] [2]
HMC719LP4 / 719LP4E
v04.0610
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz
Output IP3 and Idd vs.
Supply Voltage @ 1700 MHz [3]
Output IP3 vs. Temperature [1] [2]
Noise Figure vs. Temperature [1] [2]
Output IP3 and Idd vs.
Supply Voltage @ 2200 MHz [3]
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
1.2
1.5
1.8
2.1
2.4
2.7
3
Vdd=5V
Vdd=3V
FREQUENCY (GHz)
NOISE
FIGURE
(dB)
+85C
+25C
-40C
25
30
35
40
45
50
1.2
1.5
1.8
2.1
2.4
2.7
3
+25C
+85C
-40C
FREQUENCY (GHz)
IP3
(dBm
)
Vdd=5V
Vdd=3V
12
14
16
18
20
22
24
26
1.2
1.5
1.8
2.1
2.4
2.7
3
+25C
+85C
-40C
FREQUENCY (GHz)
P1dB
(dBm)
Vdd=5V
Vdd=3V
12
14
16
18
20
22
24
26
1.2
1.5
1.8
2.1
2.4
2.7
3
+25C
+85C
-40C
FREQUENCY (GHz)
P1dB
(dBm)
Vdd=5V
Vdd=3V
15
20
25
30
35
40
45
0
50
100
150
200
250
300
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
IP3
Idd1
Idd2
IP3
(dBm
)
Idd
(mA)
VOLTAGE SUPPLY (V)
[1] Vdd = 5V, rbias = 1.5K [2] Vdd = 3V, rbias = 1.5K
[3] rbias = 1.5K
15
20
25
30
35
40
45
0
50
100
150
200
250
300
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
IP3
Idd1
Idd2
IP3
(dBm
)
Idd
(mA)
VOLTAGE SUPPLY (V)
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