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参数资料
| 型号： | HMC772LC4 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 2000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 4 X 4 MM, ROHS COMPLIANT, CERAMIC, LEADLESS, SMT, QFN-24 |
| 文件页数： | 1/6页 |
| 文件大小： | 622K |
| 代理商： | HMC772LC4 |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 2 - 12 GHz
v01.0709
General Description
Features
Functional Diagram
Noise figure: 1.8 dB
Gain: 15 dB
output ip3: +25 dBm
p1dB output power: +13 dBm
50 ohm matched input/output
supply Voltage: +4V @ 45 mA
24 lead Ceramic 4x4mm smT package: 16mm
Electrical Specifications
, T
A = +25° C, Vdd= +4V, Idd = 45 mA*
Typical Applications
This HmC772lC4 is ideal for:
wideband Communication systems
surveillance systems
point-to-point radios
point-to-multi-point radios
military & space
Test instrumentation
The HmC772lC4 is a GaAs mmiC HemT low Noise
wideband Amplifier which operates between 2 and
12 GHz. The amplifier provides 15 dB of gain, 1.8 dB
noise figure up to 12 GHz and output ip3 of +25 dBm,
while requiring only 45 mA from a +4V supply voltage.
The psat output power of up to +15 dBm enables the
lNA to function as a lo driver for many of Hittite’s
balanced, i/Q or image reject mixers. The HmC772lC4
also features i/os that are DC blocked and internally
matched to 50 ohms, making it ideal for smT based
high capacity microwave radio applications. The
HmC772lC4 is housed in a roHs compliant 4x4 mm
QfN leadless ceramic package.
HMC772LC4
parameter
min.
Typ.
max.
Units
frequency range
2 - 12
GHz
Gain
14
15
dB
Gain Variation over Temperature
0.01
dB / °C
Noise figure
1.8
2.5
dB
input return loss
15
dB
output return loss
15
dB
output power for 1 dB Compression
13
dBm
output Third order intercept (ip3)
25
dBm
supply Current (idd) (Vdd = 4V, Vgg = -0.2V Typ.)*
45
mA
* Adjust Vgg between -1 to 0.3V to achieve idd = 45mA typical.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC772LC4_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 12 GHz |
| HMC772LC4TR | 功能描述:IC MMIC GAAS LOW NOISE AMP 24QFN 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:在售 频率:2GHz ~ 12GHz P1dB:13dBm 增益:15dB 噪声系数:1.8dB RF 类型:通用 电压 - 电源:4V 电流 - 电源:45mA 测试频率:12GHz 封装/外壳:24-TFCQFN 裸露焊盘 供应商器件封装:24-CSMT（4x4） 标准包装:1 |
| HMC773 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC FUNDAMENTAL MIXER, 6 - 26 GHz |
| HMC773_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC Fundam ental Mixer, 6 - 26 GHz |
| HMC773ALC3B | 功能描述:IC MIXER 6-26GHZ DUAL 12-QFN 制造商:analog devices inc. 系列:- 包装:剪带 零件状态:在售 RF 类型:VSAT 频率:6GHz ~ 26GHz 混频器数:1 增益:- 噪声系数:- 辅助属性:- 电流 - 电源:- 电压 - 电源:- 封装/外壳:12-CLCC 裸露焊盘 供应商器件封装:12-CLCC（3x3） 标准包装:1 |
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