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参数资料
| 型号： | HMC849LP4CE |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 开关 |
| 英文描述： | 0 MHz - 6000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 2.5 dB INSERTION LOSS |
| 封装： | 4 X 4 MM, ROHS COMPLIANT, PLASTIC, LEADLESS, SMT, QFN-16 |
| 文件页数： | 1/8页 |
| 文件大小： | 379K |
| 代理商： | HMC849LP4CE |
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC849LP4CE
HIGH ISOLATION SPDT
NON-REFLECTIVE SWITCH, DC - 6 GHz
v03.0311
General Description
Features
Functional Diagram
high isolation: up to 60 dB
Single Positive control: 0/+3V to +5V
high input iP3: +52 dBm
Non-Reflective Design
“All Off” State
16 Lead 4x4 mm QFN Package: 16 mm
Typical Applications
the hMc849LP4ce is ideal for:
Cellular/4G Infrastructure
WiMAX, WiBro & Fixed Wireless
Automotive Telematics
Mobile Radio
Test Equipment
the hMc849LP4ce is a high isolation non-reflec-
tive DC to 6 GHz GaAs pHEMT SPDT switch in a low
cost leadless surface mount package. The switch is
ideal for cellular/WiMAX/4G Infrastructure applicati-
ons yielding up to 60 dB isolation, low 0.8 dB inser-
tion loss and +52 dBm input IP3. Power handling
is excellent up through the 5 - 6 GHz WiMAX band
with the switch offering a P1dB compression point of
+31 dBm. On-chip circuitry allows a single positive
voltage control of 0/+3V or 0/+5V at very low DC
currents. An enable input (EN) set to logic high will put
the switch in an “all off” state.
Electrical Specifications, T
A = +25 °C, Vctl = 0/Vdd, Vdd = +3V to +5V, 50 Ohm System
Parameter
Frequency
Min.
typ.
Max.
Units
insertion Loss
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
0.8
1.0
1.7
1.3
1.5
2.5
dB
Isolation (RFC to RF1/RF2)
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
53
48
40
60
55
52
dB
Return Loss (On State)
DC - 4.0 GHz
4.0 - 6.0 GHz
17
13
dB
Return Loss (Off State)
DC - 6.0 GHz
15
dB
Input Power for 1 dB Compression
+3V
+5V
0.35 - 4.0 GHz
29
34
30
35
dBm
input third Order intercept
(Two-Tone Input Power = +7 dBm Each Tone)
DC - 6.0 GHz
52
dBm
Switching Speed
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 4.0 GHz
80
150
ns
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC849LP4CE_1 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz |
| HMC849LP4CE_11 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz |
| HMC849LP4CETR | 制造商:Hittite Microwave Corp 功能描述:IC SW GASS PHEMT SPDT 16QFN 制造商:Hittite Microwave Corp 功能描述:HMC849 Series DC - 6 GHz SPDT Non-Reflective Switch SMT - 4x4 mm QFN-24 制造商:Hittite Microwave Corporation 功能描述:HMC849LP4CETR |
| HMC8500LP5DE | 功能描述:HIGH POWER GAN AMPS- 10W 1 - 2.5 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:在售 频率:10MHz ~ 2.8GHz P1dB:- 增益:20dB 噪声系数:5dB RF 类型:- 电压 - 电源:28V 电流 - 电源:100mA 测试频率:- 封装/外壳:32-LFQFN 裸露焊盘，CSP 供应商器件封装:32-LFCSP-CAV（5x5） 标准包装:1 |
| HMC8500LP5DETR | 功能描述:HIGH POWER GAN AMPS- 10W 1 - 2.5 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:在售 频率:10MHz ~ 2.8GHz P1dB:- 增益:20dB 噪声系数:5dB RF 类型:- 电压 - 电源:28V 电流 - 电源:100mA 测试频率:- 封装/外壳:32-LFQFN 裸露焊盘，CSP 供应商器件封装:32-LFCSP-CAV（5x5） 标准包装:1 |
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