参数资料
型号: HMC849LP4CE
厂商: HITTITE MICROWAVE CORP
元件分类: 开关
英文描述: 0 MHz - 6000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 2.5 dB INSERTION LOSS
封装: 4 X 4 MM, ROHS COMPLIANT, PLASTIC, LEADLESS, SMT, QFN-16
文件页数: 4/8页
文件大小: 379K
代理商: HMC849LP4CE
14
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
S
w
it
c
h
e
S
-
S
P
D
t
-
S
M
t
14 - 4
Truth Table
Absolute Maximum Ratings
control input
Signal Path State
Vctl
eN
RFc - RF1
RFc - RF2
Low
OFF
ON
high
Low
ON
OFF
Low
high
OFF
high
OFF
Digital Control Voltages
State
Bias condition
Low
0 to +0.8 Vdc @ <1 A typical
high
+2.0 to +5.0 Vdc @ 30 A typical
Bias Voltage (Vdd)
7V
Control Voltage (Vctl, EN)
-1V to Vdd +1V
RF Input Power *
through Path 3V/5V
termination Path 3V/5V
30.60 / 33 dBm
26.4 dBm
channel temperature
150 °c
Continuous Pdiss (T = 85 °C)
(derate 17.6 mW/°C for through path, and
6.8 mW/°C for termination path above 85 °C)
through Path
termination Path
1.144 w
0.441 w
thermal Resistance
(channel to package bottom)
through Path
termination Path
56.8 °c/w
147.3 °c/w
Storage temperature
-65 to +150 °c
Operating temperature
-40 to +85 °c
ESD Sensitivity (HBM)
class 1A
* The RF input power is quite lower than the breakdown
power levels. Hence, the only concern with this product
is the thermal limit.
Vdd
(V)
Idd (Typ.)
(mA)
3
0.80
5
0.85
Bias Voltage & Current
eLectROStAtic SeNSitiVe DeVice
OBSERVE HANDLING PRECAUTIONS
HMC849LP4CE
v03.0311
HIGH ISOLATION SPDT
NON-REFLECTIVE SWITCH, DC - 6 GHz
相关PDF资料
PDF描述
HMC902LP3E 5000 MHz - 10000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMC907 200 MHz - 22000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
HMC925LC5 5500 MHz - 8600 MHz RF/MICROWAVE UP CONVERTER
HMC928LP5E 2000 MHz - 4000 MHz, 0 deg - 360 deg RF/MICROWAVE PHASE SHIFTER
HMC951LP4E RF/MICROWAVE DOWN CONVERTER
相关代理商/技术参数
参数描述
HMC849LP4CE_1 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz
HMC849LP4CE_11 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz
HMC849LP4CETR 制造商:Hittite Microwave Corp 功能描述:IC SW GASS PHEMT SPDT 16QFN 制造商:Hittite Microwave Corp 功能描述:HMC849 Series DC - 6 GHz SPDT Non-Reflective Switch SMT - 4x4 mm QFN-24 制造商:Hittite Microwave Corporation 功能描述:HMC849LP4CETR
HMC8500LP5DE 功能描述:HIGH POWER GAN AMPS- 10W 1 - 2.5 制造商:analog devices inc. 系列:- 包装:剪切带(CT) 零件状态:在售 频率:10MHz ~ 2.8GHz P1dB:- 增益:20dB 噪声系数:5dB RF 类型:- 电压 - 电源:28V 电流 - 电源:100mA 测试频率:- 封装/外壳:32-LFQFN 裸露焊盘,CSP 供应商器件封装:32-LFCSP-CAV(5x5) 标准包装:1
HMC8500LP5DETR 功能描述:HIGH POWER GAN AMPS- 10W 1 - 2.5 制造商:analog devices inc. 系列:- 包装:剪切带(CT) 零件状态:在售 频率:10MHz ~ 2.8GHz P1dB:- 增益:20dB 噪声系数:5dB RF 类型:- 电压 - 电源:28V 电流 - 电源:100mA 测试频率:- 封装/外壳:32-LFQFN 裸露焊盘,CSP 供应商器件封装:32-LFCSP-CAV(5x5) 标准包装:1