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参数资料
| 型号： | HMC719LP4ETR |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 1300 MHz - 2900 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 4 X 4 MM, ROHS COMPLIANT, PLASTIC, SMT, 24 PIN |
| 文件页数： | 9/10页 |
| 文件大小： | 715K |
| 代理商： | HMC719LP4ETR |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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7 - 8
HMC719LP4 / 719LP4E
v04.0610
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz
pin Number
function
Description
interface schematic
1, 3 - 5, 7 - 16,
18, 20, 22
N/C
No connection necessary. These pins may be connected to
rf/DC ground without affecting performance.
2
rfiN
This pin is DC coupled
and matched to 50 ohms.
6
res
This pin is used to set the DC current of the amplifier by
selection of external bias resistor. see application circuit.
17
rfoUT
rf output and DC BiAs for the second amplifier.
see Application Circuit for off-chip components.
19
rfiN2
This pin is DC coupled. An off-chip DC
blocking capacitor is required.
21
rfoUT1
This pin is matched to 50 ohms.
23, 24
Vdd1, 2
power supply Voltage for the first amplifier. external bypass
capacitors are required. see application circuit.
Pin Descriptions
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