参数资料
型号: HMC753LP4E
厂商: Hittite Microwave Corporation
文件页数: 4/6页
文件大小: 0K
描述: IC AMP MMIC GAAS LN 24QFN
标准包装: 1
频率: 1GHz ~ 11GHz
P1dB: 15dBm
增益: 14dB
噪音数据: 2dB
RF 型: 通用
电源电压: 5V
电流 - 电源: 55mA
封装/外壳: 24-VFQFN 裸露焊盘
包装: 标准包装
其它名称: 1127-1068-6
HMC753LP4E
v03.0111
Absolute Maximum Ratings
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 1 - 11 GHz
7
Drain Bias Voltage
+6.0V
rf input power
Gate Bias Voltage, Vgg1
Gate Bias Voltage, Vgg2
Channel Temperature
Continuous pdiss (T = 85 °C)
(derate 8.4 mw/°C above 85 °C)
Thermal resistance
(Channel to die bottom)
storage Temperature
operating Temperature
12 dBm
-1 to 0.3V
0 to 2.5V
180 °C
0.8 w
119 °C/w
-65 to +150 °C
-40 to +85 °C
eleCTrosTATiC seNsiTiVe DeViCe
oBserVe HANDliNG preCAUTioNs
Outline Drawing
NoTes:
1. pACKAGe BoDY mATeriAl: low sTress iNJeCTioN molDeD
plAsTiC siliCA AND siliCoN impreGNATeD.
2. leAD AND GroUND pADDle mATeriAl: Copper AlloY.
3. leAD AND GroUND pADDle plATiNG: 100% mATTe TiN
4. DimeNsioNs Are iN iNCHes [millimeTers].
5. leAD spACiNG TolerANCe is NoN-CUmUlATiVe.
6. pAD BUrr leNGTH sHAll Be 0.15mm mAX. pAD BUrr HeiGHT sHAll
Be 0.05mm mAX.
7. pACKAGe wArp sHAll NoT eXCeeD 0.05mm
8. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To
pCB rf GroUND.
9. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD pCB lAND
pATTerN.
Package Information
part Number
package Body material
lead finish
package marking [1]
HmC753lp4e
roHs-compliant low stress injection molded plastic
100% matte sn
[2]
753
XXXX
[1] 4-Digit lot number XXXX
[2] max peak reflow temperature of 260 °C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7-4
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