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参数资料
| 型号： | HMC755LP4E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 2300 MHz - 2800 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 4 X 4 MM, ROHS COMPLIANT, PLASTIC, SMT, QFN-24 |
| 文件页数： | 3/8页 |
| 文件大小： | 790K |
| 代理商： | HMC755LP4E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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P1dB vs. Temperature
Psat vs. Temperature
Output IP3 vs. Temperature @ 26 dBm
VDET Output Voltage vs. Temperature
Power Compression @ 2.5 GHz
Output IP3 vs. Temperature @ 2.4 GHz
HMC755LP4E
v03.1110
GaAs MMIC 1 WATT
POWER AMPLIFIER, 2.3 - 2.8 GHz
20
25
30
35
40
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
+25 C
+85 C
- 40 C
P1dB
(dBm)
FREQUENCY (GHz)
30
35
40
45
50
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
+25 C
+85 C
- 40 C
IP3
(dBm
)
FREQUENCY (GHz)
0
0.5
1
1.5
2
2.5
3
3.5
13
17
21
25
29
33
+25 C
+85 C
- 40 C
V
D
E
T
(V
)
OUTPUT POWER (dBm)
20
25
30
35
40
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
+25 C
+85 C
- 40 C
Psat
(dBm)
FREQUENCY (GHz)
30
35
40
45
50
18
19
20
21
22
23
24
25
26
27
+25 C
+85 C
- 40 C
IP3
(dB)
SINGLE TONE POUT (dBm)
0
10
20
30
40
50
-20
-15
-10
-5
0
5
Pout
Gain
PAE
P
ou
t(
dB
m
),
G
A
IN
(d
B
),
P
A
E
(%
)
INPUT POWER (dBm)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC755LP4E_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz |
| HMC755LP4ETR | 制造商:Hittite Microwave Corp 功能描述:HMC755 Series 2.3 - 2.8 Ghz 1 Watt SMT Power Amplifier - 4x4 mm QFN-24 |
| HMC756 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz |
| HMC756_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz |
| HMC757 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER, 16 - 24 GHz |
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