参数资料
型号: HMC755LP4E
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 2300 MHz - 2800 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装: 4 X 4 MM, ROHS COMPLIANT, PLASTIC, SMT, QFN-24
文件页数: 6/8页
文件大小: 790K
代理商: HMC755LP4E
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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9 - 6
HMC755LP4E
v03.1110
GaAs MMIC 1 WATT
POWER AMPLIFIER, 2.3 - 2.8 GHz
pin number
function
Description
interface schematic
1, 3, 5, 6, 12 - 14,
18, 19, 21, 22, 24
n/C
These pins are not connected internally. However, all data
shown herein was measured with these pins connected to
rf/DC ground.
2
GnD
Ground: Backside of package has exposed metal paddle
that must be connected to ground thru a short path.
Vias under the device are required.
4
rfin
This pin is DC coupled
and matched to 50 ohms.
7
VCs
DC power supply pin for bias circuitry.
8 - 10
Ven1 - 3
power control pins. for max power these
pins should be connected to 5V. This voltage
can be reduced, or r1-r4 resistor values increased
to reduce the quiescent current.
for full power down, apply V <0.5V
11
VDeT
DC voltage output proportional to rfoUT signal.
15, 16, 17
rfoUT
rf output and DC bias for the output stage. external
rf matching, bypass capacitors, and pull up choke are
required as shown in the application circuit.
20
Vcc2
power supply voltage for the second amplifier stage.
external bypass capacitors and pull up choke are required
as shown in the application schematic.
23
Vcc1
power supply voltage for the first amplifier stage. external
bypass capacitors are required as shown in the application
schematic.
Pin Descriptions
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相关代理商/技术参数
参数描述
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