参数资料
型号: HMC799LP3E
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 0 MHz - 700 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: 3 X 3 MM, ROHS COMPLIANT, PLASTIC, SMT, 16 PIN
文件页数: 2/8页
文件大小: 747K
代理商: HMC799LP3E
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
T
R
A
N
S
IM
P
E
D
A
N
C
E
A
M
P
S
-
S
M
T
11
11 - 2
HMC799LP3E
v01.1009
DC - 700 MHz, 10 kOhm
TRANSIMPEDANCE AMPLIFIER
Parameter
Conditions
Min.
Typ.
Max.
Units
Input Referred RMS Current Noise
Cpd [1] <1pF, @ 700 MHz BW
149
nA RMS
Cpd [1] = 1pF, @630 MHz BW
164
nA RMS
Cpd [1] = 2pF, @ 560 MHz BW
174
nA RMS
Cpd [1] = 3pF, @ 420 MHz BW
132
nA RMS
Saturated Output Swing
Vin = 50mV p-p
1
Vp-p
Output Power 1-dB Compression
OP1dB @ 200 MHz
4
dBm
Output Third Order Intercept Point
OIP3 @ 200 MHz
13
dBm
Input Overdrive Current
20
mA
Output Return Loss
@ 500 MHz
16
20
dB
Electrical Specifications (Conditions)
Gain vs. Temperature
Output Return Loss vs. Temperature
0
10
20
30
40
50
0
100
200
300
400
500
600
700
800
+25C
+85C
-40C
FREQUENCY (MHz)
G
A
IN
(d
B
)
-50
-40
-30
-20
-10
0
100
200
300
400
500
600
700
800
+25C
+85C
-40C
FREQUENCY (MHz)
R
E
T
U
R
N
LO
S
(d
B
)
Input Referred Noise Density vs. C
PD
[1]
Input Referred Noise Density vs.
Temperature [2]
[1] Cpd is the total parasitic capacitance value resulting from the addition of the input photo diode. This value includes photo diode parasitic
capacitance, PCB trace capacitance and package parasitic capacitance.
[2] Cpd = 1 pF
0
5
10
15
20
0
100
200
300
400
500
600
700
800
+25C
+85C
-40C
FREQUENCY (MHz)
IN
P
U
T
R
E
F
E
R
E
D
N
O
IS
E
D
E
N
S
IT
Y
(p
A
/
H
z)
0
5
10
15
20
0
100
200
300
400
500
600
700
800
C
pd
=0pF
C
pd
=1pF
C
pd
=2pF
C
pd
=3pF
FREQUENCY (MHz)
IN
P
U
T
R
E
F
E
R
E
D
N
O
IS
E
D
E
N
S
IT
Y
(p
A
/
H
z)
相关PDF资料
PDF描述
HMC816LP4E 230 MHz - 660 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMC849LP4CE 0 MHz - 6000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 2.5 dB INSERTION LOSS
HMC902LP3E 5000 MHz - 10000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMC907 200 MHz - 22000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
HMC925LC5 5500 MHz - 8600 MHz RF/MICROWAVE UP CONVERTER
相关代理商/技术参数
参数描述
HMC799LP3E_1 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:DC - 700 MHz, 10 kOhm TRANSIMPEDANCE AMPLIFIER
HMC799LP3E_10 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:DC - 700 MHz, 10 kOhm TRANSIMPEDANCE AMPLIFIER
HMC800LP3E 制造商:Hittite Microwave Corp 功能描述:IC ATTENUATOR 1-BIT 10DB 16-QFN
HMC800LP3ETR 制造商:Hittite Microwave Corp 功能描述:NA ONLY -HMC800 Series DC - 10 Ghz Digital Positive Control Attenuator - QFN-16 制造商:Hittite Microwave Corp 功能描述:HMC800 Series DC - 10 Ghz Digital Positive Control Attenuator - 3x3 mm QFN-16
HMC801LP3E 制造商:Hittite Microwave Corp 功能描述:IC ATTENUATOR 1-BIT 15DB 16-QFN