- 您现在的位置：买卖IC网 > PDF目录60840 > HMC949 (HITTITE MICROWAVE CORP) 12000 MHz - 16000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER PDF资料下载
参数资料
| 型号： | HMC949 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 12000 MHz - 16000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 2.72 X 1.73 MM, 0.10 MM HEIGHT, DIE-14 |
| 文件页数： | 7/10页 |
| 文件大小： | 815K |
| 代理商： | HMC949 |
A
m
p
li
f
ie
r
s
-
li
n
e
A
r
&
p
o
w
e
r
-
C
h
ip
3
3 - 6
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC949
v02.0211
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Outline Drawing
noTes:
1. All Dimensions Are in inChes [mm]
2. Die ThiCKness is .004”
3. TYpiCAl BonD pAD is .004” sQUAre
4. BACKsiDe meTAlliZATion: GolD
5. BonD pAD meTAlliZATion: GolD
6. BACKsiDe meTAl is GroUnD.
7. ConneCTion noT reQUireD for UnlABeleD BonD pADs.
8. oVerAll Die siZe ± .002
Die Packaging Information [1]
standard
Alternate
Gp-1 (Gel pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Pad Descriptions
pad number
function
Description
interface schematic
1
rfin
This pad is DC coupled and matched to 50 ohms
over the operating frequency range.
2 - 5
9 - 10
Vdd1, Vdd2,
Vdd3, Vdd4
Vdd4, Vdd5
Drain bias voltage for the amplifier. external bypass
capacitors of 100 pf are required for each pad, followed by
common 0.1 f capacitors.
6
rfoUT
This pad is DC coupled
and matched to 50 ohms.
相关PDF资料 |
PDF描述 |
|---|---|
| HMC950 | 12000 MHz - 16000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| HMC965LP5E | 12500 MHz - 15500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMC968 | 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMC971 | 18000 MHz - 40000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.9 dB INSERTION LOSS |
| HMC995LP5GE | 12000 MHz - 16000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC949_11 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz |
| HMC950 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz |
| HMC950_11 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz |
| HMC951BLP4E | 功能描述:RF IC Downconverter Radar 5.6GHz ~ 8.6GHz 24-SMT (4x4) 制造商:analog devices inc. 系列:- 包装:剪带 零件状态:有效 功能:降频器 频率:5.6GHz ~ 8.6GHz RF 类型:雷达 辅助属性:- 封装/外壳:24-VFQFN 裸露焊盘 供应商器件封装:24-SMT（4x4） 标准包装:1 |
| HMC951BLP4ETR | 功能描述:IC MMIC IQ DOWNCONVERTER 24-QFN 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:在售 功能:降频器 频率:5.6GHz ~ 8.6GHz RF 类型:雷达 辅助属性:- 封装/外壳:24-VFQFN 裸露焊盘 供应商器件封装:24-SMT（4x4） 标准包装:1 |
发布紧急采购，3分钟左右您将得到回复。