- 您现在的位置：买卖IC网 > PDF目录67102 > HMJ9 (TRIQUINT SEMICONDUCTOR INC) 1140 MHz - 1160 MHz RF/MICROWAVE TRIPLE BALANCED MIXER, 9.3 dB CONVERSION LOSS-MAX PDF资料下载
参数资料
| 型号： | HMJ9 |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 混频器 |
| 英文描述： | 1140 MHz - 1160 MHz RF/MICROWAVE TRIPLE BALANCED MIXER, 9.3 dB CONVERSION LOSS-MAX |
| 封装： | SURFACE MOUNT PACKAGE-22 |
| 文件页数： | 1/3页 |
| 文件大小： | 198K |
| 代理商： | HMJ9 |
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6620 e-mail: sales@wj.com Web site: www.wj.com
November 2003
HMJ9
High Dynamic Range FET Mixer
The Communications Ed
Specifications
Parameters
Units
Minimum
Typical
Maximum
Condition
Frequency Range:
MHz
RF
MHz
860
900
LO
MHz
1140
1160
IF
MHz
250
280
SSB Conversion Loss
dB
8.5
Noise Figure
dB
11
Isolation:
LO-RF
dB
18
20
LO-IF
dB
40
50
IF-RF
dB
25
IIP3
dBm
32
35
RF = 900 MHz (0dBm)
Return Loss:
RF Port
dB
10
LO Port
dB
9
IF Port
dB
15
Input P1dB
dBm
23
LO Drive Level
dBm
17
DC Current at +3V Bias
mA
23
35
Test conditions unless otherwise noted stated: RF = 900 MHz (-10 dBm), LO = 830 MHz (17 dBm), IF = 70 MHz and 25°C.
Absolute Maximum Rating
Ordering Information
Parameters
Rating
Part No.
Description
Operating Case Temperature
-40 to +85°C
HMJ9
High Dynamic Range FET Mixer
Storage Temperature
-65 to +100°C
(Available in Tape & Reel)
Maximum Input Power
25 dBm
HMJ9 – PCB
Fully Assembled Application
Circuit
1. Operation of this device above any of these parameters may cause permanent damage.
2. Total sum of LO port and RF port power should not exceed 25 dBm.
The Communications Edge TM
Product Features
+35 dBm IIP3
No External Matching
Elements Required
RF 860-900 MHz
LO 1140-1160 MHz
IF 250-280 MHz
+17 dBm Drive Level
+3V Bias (23 mA)
Low Cost Surface
Mount J-Lead Package
Product Description
The HMJ9 is a high dynamic range,
GaAs FET mixer. As an upconverter,
this active FET mixer realizes a typical
third order intercept point of +35 dBm at
an LO drive level of +17 dBm. The
HMJ9 comes in a low cost, J-lead
package.
Typical applications include
frequency
up/down
conversion
for
receivers and transmitters used in cellular
communications systems.
Functional Diagram
相关PDF资料 |
PDF描述 |
|---|---|
| HML2F | 1900 MHz - 2000 MHz RF/MICROWAVE 90 DEGREE HYBRID COUPLER, 0.11 dB INSERTION LOSS-MAX |
| HMMC-1001 | 0 MHz - 50000 MHz RF/MICROWAVE VARIABLE ATTENUATOR |
| HMMC-1002 | 0 MHz - 50000 MHz RF/MICROWAVE VARIABLE ATTENUATOR |
| HMMC-2007 | 0 MHz - 8000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.4 dB INSERTION LOSS |
| HMMC-5022 | 2000 MHz - 22000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMJ9-PCB | 制造商:WJCI 制造商全称:WJCI 功能描述:The Communications Edge |
| HMJE13001 | 制造商:HSMC 制造商全称:HSMC 功能描述:HMJE13001 |
| HMJE13003 | 制造商:HSMC 制造商全称:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| HMJE13003D | 制造商:HSMC 制造商全称:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| HMJE13003T | 制造商:HSMC 制造商全称:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。