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参数资料
| 型号： | HMMC-5022 |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 放大器 |
| 英文描述： | 2000 MHz - 22000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 0.1173 X 0.0303 INCH, 0.0056 INCH HEIGHT, DIE |
| 文件页数： | 1/7页 |
| 文件大小： | 633K |
| 代理商： | HMMC-5022 |
Agilent HMMC-5021 (2-22 GHz),
HMMC-5022 (2-22 GHz), and
HMMC-5026 (2-26.5 GHz)
GaAs MMIC Traveling Wave Amplier
1GG7-8000, 1GG7-8006, 1GG7-8007
Data Sheet
Features
Wide-frequency range: 2-26.5 GHz
High gain: 9.5 dB
Gain atness: ±0.75 dB
Return loss:
Input: -14 dB, Output: -13 dB
Low-frequency operation capability:
< 2 GHz
Gain control: 35 dB dynamic range
Moderate power:
20 GHz:
P
-1 dB : 18 dBm
P
sat : 20 dBm
26.5 GHz:
P
-1 dB : 15 dBm
P
sat : 17 dBm
Chip Size:
2980 × 770 m (117.3 × 30.3 mils)
Chip Size Tolerance: ±10 m (±0.4 mils)
Chip Thickness:
127 ± 15 m (5.0 ± 0.6 mils)
Pad Dimensions:
75 × 75 m (2.95 × 2.95 mils), or larger
Absolute Maximum Ratings1
Symbol
Parameters/Conditions
Min.
Max.
Units
VDD
Positive Drain Voltage
8.0
volts
IDD
Total Drain Current
250
mA
VG1
First Gate Voltage
-5
0
volts
IG1
First Gate Current
-9
+5
mA
VG2
2
Second Gate Voltage
-2.5
+3.5
volts
IG2
Second Gate Current
-7
mA
PDC
DC Power Dissipation
2.0
watts
Pin
CW Input Power
23
dBm
Tch
Operating Channel Temp.
+150
°C
Tcase
Operating Case Temp.
-55
°C
Tstg
Storage Temperature
-65
+165
°C
Tmax
Max. Assembly Temp.
300
°C
(for 60 seconds maximum)
1 Operation in excess of any one of these conditions may result in permanent damage to this device.
TA = 25°C except for Tch, Tstg, and Tmax.
2 Minimum voltage on VG2 must not violate the following: VG2(min) > VDD - 9 volts.
Description
The HMMC-5021/22/26 is a broad-
band GaAs MMIC traveling wave
amplier designed for high gain and
moderate output power over the full
2 to 26.5 GHz frequency range. Seven
MES-FET cascode stages provide a at
gain response, making the HMMC-
5021/22/26 an ideal wideband
gain block. Optical lithography is used
to produce gate lengths of ≈0.4 m.
The HMMC-5021/22/26 incorporates
advanced MBE
technology, Ti-Pt-Au gate metalliza-
tion, silicon nitride passivation, and
polyimide for scratch protection.
相关PDF资料 |
PDF描述 |
|---|---|
| HMMC-5021 | 2000 MHz - 22000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5027 | 2000 MHz - 26500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5034 | 37000 MHz - 43000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMMC-5034 | 37000 MHz - 43000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMMC-5040 | 20000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMMC-5023 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 26.5GHZ 7V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5025 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 50GHZ 7V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5026 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 26.5GHZ 8V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5027 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 26.5GHZ 8V CHIP - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5032 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
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