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参数资料
| 型号： | HMMC-5040 |
| 元件分类： | 放大器 |
| 英文描述： | 20000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 0.0677 X 0.029.9 INCH, DIE |
| 文件页数： | 1/6页 |
| 文件大小： | 114K |
| 代理商： | HMMC-5040 |
HMMC-5040
20 – 40 GHz Amplifier
Data Sheet
Description
The HMMC-5040 is a high-gain broadband MMIC
amplifier designed for both military applica-tions and
commercial communication systems. This four stage
amplifier has input and output matching circuitry for
use in 50 ohm environments. It is fabricated using a
PHEMT integrated circuit structure that provides
exceptional broadband performance. The backside of
the chip is both RF and DC ground. This helps simplify
the assembly process and reduces assembly related
performance variations and costs. This MMIC is a cost
effective alternative to hybrid (discrete-FET) amplifi-
ers that require complex tuning and assembly processes.
Features
Large bandwidth:
20 – 44 GHz typical
21 – 40 GHz specified
High gain:
22 dB typical
Saturated output power:
21 dBm typical
Supply bias:
≤ 4.5 volts @ ≤ 300 mA
Absolute Maximum Ratings[1]
Symbol
Parameters/Conditions
Units
Min.
Max.
VD1, 2-3-4
Drain Supply Voltages
V
5
VG1, 2-3-4
Gate Supply Voltages
V
-3.0
0.5
IDD
Total Drain Current
mA
400
Pin
RF Input Power
dBm
21
Tch
Channel Temperature[2]
°C
+160
TA
Backside Ambient Temp.
°C
-55
+75
TSTG
Storage Temperature
°C
-65
+165
Tmax
Maximum Assembly Temp.
°C
+300
Notes:
1. Absolute maximum ratings for continuous operation unless otherwise noted.
2. Refer to DC Specifications/Physical Properties table for derating information.
Chip Size:
1720 x 760
m (67.7 x 29.9 mils)
Chip Size Tolerance:
±10 m (±0.4 mils)
Chip Thickness:
127
± 15 m (5.0 ± 0.6 mils)
Pad Dimensions:
80 x 80
m (3.1 x 3.1 mils)
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