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参数资料
| 型号： | HMMC-5040 |
| 元件分类： | 放大器 |
| 英文描述： | 20000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 0.0677 X 0.029.9 INCH, DIE |
| 文件页数： | 5/6页 |
| 文件大小： | 114K |
| 代理商： | HMMC-5040 |
5
HMMC-5040 Typical Performance,
continued
–60
–30
0
30
60
90
OPERATING TEMPERATURE (
°C)
VDD = 4.5 V, IDD = 300 mA @ TA = 25°C
Figure 6. Small-Signal Gain[1] and Compressed
Power[3] vs. Temperature.
35
30
25
20
15
10
40
35
30
25
20
15
SMALL-SIGNAL
GAIN
(dB)
COMPRESSED
OUTPUT
POWER
(dBm)
Gain
Power
22 GHz
28 GHz
38 GHz
25 GHz
30 GHz
35 GHz
40 GHz
20
24
28
32
36
40
FREQUENCY (GHz)
Figure 7. Noise Figure vs. Frequency.
20
16
12
8
4
0
NOISE
FIGURE
(dB)
VDD = 4.5 V
IDD = 300 mA
VDD = 2.0 V
IDD = 170 mA
VDD = 3.0 V
IDD = 130 mA
Notes:
1. Measurements taken on a device mounted in a connectorized package calibrated at the connector terminals.
2. Output power into 50
with 2 dBm input power. Wafer-probed measurements.
3. Wafer-probed measurements.
0.06 dB/
°C
100
300
200
TOTAL DRAIN CURRENT, IDD (mA)
VDD = 4.5 V
Figure 8. Output Power[2] and Efficiency vs.
Drain Current with VDD = 4.5 V.
23
21
19
17
15
13
25
21
17
13
9
5
OUTPUT
POWER,
P
SAT
(dBm)
POWER-ADDED
EFFECIENCY
@
P
SAT
(%)
Efficiency
Power
23 GHz
28 GHz
38 GHz
42 GHz
100
300
200
TOTAL DRAIN CURRENT, IDD (mA)
VDD = 3 V
Figure 9. Output Power[2] and Efficiency vs.
Drain Current with VDD = 3 V.
23
21
19
17
15
13
25
21
17
13
9
5
OUTPUT
POWER,
P
SAT
(dBm)
POWER-ADDED
EFFECIENCY
@
P
SAT
(%)
Power
23 GHz
28 GHz
38 GHz
42 GHz
610
14
18
22
26
OUTPUT POWER (dBm)
VDD = 4.5 V, IDD = 300 mA, f = 40GHz
Figure 10. Gain Compression and Efficiency
Characteristics.[3]
30
26
22
18
14
10
20
25
10
5
0
GAIN
(dB)
POWER-ADDED
EFFICIENCY
(%)
Gain
η
added
20
24
28
32
36
40
FREQUENCY (GHz)
VDD = 4.5 V, IDD = 300 mA
Figure 11. Output Power and Gain vs.
Frequency Characteristics.[3]
30
26
22
18
14
10
30
26
22
18
14
10
OUTPUT
POWER,
P
–1dB
AND
P
SAT
(dBm)
SMALL-SIGNAL
GAIN
(dB)
PSAT
Gain
P–1dB
Efficiency
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