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参数资料
| 型号： | HMMC-5040 |
| 元件分类： | 放大器 |
| 英文描述： | 20000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 0.0677 X 0.029.9 INCH, DIE |
| 文件页数： | 2/6页 |
| 文件大小： | 114K |
| 代理商： | HMMC-5040 |
2
HMMC-5040 DC Specifications/Physical Properties[1]
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
VD1, 2-3-4
Drain Supply Operating Voltages
Volts
2
4.5
5
ID1
First Stage Drain Supply Current
mA
55
(VDD = 4.5 V, VG1 = -0.6 V)
ID2-3-4
Total Drain Supply Current for Stages 2, 3, and 4
mA
245
(VDD = 4.5 V, VGG = -0.6 V)
VG1, 2, 3-4
Gate Supply Operating Voltages (IDD 300 mA)
Volts
-0.6
VP
Pinch-off Voltage (VDD = 4.5 V, IDD ≤ 10 mA)
Volts
-2
-1.2
-0.8
θch-bs
Thermal Resistance[2]
°C/Watt
62
(Channel-to-Backside at Tch = 160°C)
Tch
Channel Temperature[3] (TA = 75°C, MTTF > 10
6 hrs,
°C
160
VDD = 4.5 V, IDD= 300 mA)
Notes:
1. Backside ambient operating temperature TA = 25°C unless otherwise noted.
2. Thermal resistance (
°C/Watt) at a channel temperature T(°C) can be estimated using the equation:
θ(T) 62 x [T(°C)+ 273] / [160°C + 273].
3. Derate MTTF by a factor of two for every 8
°C above Tch.
HMMC-5040 RF Specifications,
TA = 25°C, Zo = 50 , VDD = 4.5V, IDD = 300 mA
Broadband
Narrow Band
Symbol
Parameters/Conditions
Specifications
Performance
Units
Min.
Typ.
Max.
Typical
BW
Operating Bandwidth
GHz
21
20–44
40
21–24
27–29
37–40
Gain
Small Signal Gain
dB
20
22
25
23
22
Gain
Small Signal Gain Flatness
dB
±1.5
±1
±0.75
±0.3
(RLin)
MIN
Minimum Input Return Loss
dB
8
10
9
10
14
(RLout)
MIN
Minimum Output Return Loss
dB
8
10
11
12
Isolation
Reverse Isolation
dB
54
P-1dB
Output Power
dBm
18
(@ 1dB Gain Compression)
PSAT
Saturated Output Power
dBm
20
21
@ 3 dB Gain Compression
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