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参数资料
| 型号： | HMMC-5040 |
| 元件分类： | 放大器 |
| 英文描述： | 20000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 0.0677 X 0.029.9 INCH, DIE |
| 文件页数： | 3/6页 |
| 文件大小： | 114K |
| 代理商： | HMMC-5040 |
3
Applications
The HMMC-5040 broadband
amplifier is designed for both
military (35 GHz) applications and
wireless communication systems
that operate at 23, 28, and 38 GHz.
It is also suitable for use as a
frequency multiplier due to
excellent below-band input return
loss and high gain.
Biasing and Operation
The recommended DC bias
condition is with all drains
connected to single 4.5 volt supply
and all gates connected to an
adjustable negative voltage supply
as shown in Figure 12a. The gate
voltage is adjusted for a total drain
supply current of typically up to
300 mA. Figures 4, 5, 8, and 9 can
be used to help estimate the
minimum drain voltage and
current necessary for a given RF
gain and output power.
The second, third, and fourth
stage DC drain bias lines are
connected internally (Figure 1)
and therefore require only a single
bond wire. An additional bond
wire is needed for the first stage
DC drain bias, V
D1.
Only the third and fourth stage DC
gate bias lines are connected
internally. A total of three DC gate
bond wires are required: one for
V
G1, one for VG2, and one for the
V
G3-to -VG4 connection.
The RF input has matching
circuitry that creates a 50 ohm DC
and RF path to ground. A DC
blocking capacitor should be used
in the RF input transmission line.
Any DC voltage applied to the RF
input must be maintained below
1 volt. The RF output is
AC-coupled.
No ground wires are needed since
ground connections are made with
plated through-holes to the
backside of the device.
The HMMC-5040 can also be used
to double, triple, or quadruple the
frequency of input signals. Many
bias schemes may be used to
generate and amplify desired
harmonics within the device. The
information given here is intended
to be used by the customer as a
starting point for such applica-
tions. Optimum conversion
efficiency is obtained with
approximately 14 dBm input drive
level.
As a doubler, the device can mul-
tiply an input signal in the
10-20 GHz frequency range up to
20-40 GHz with conversion gain
for output frequencies exceeding
30 GHz. Similarly, 5-10 GHz signals
can be quadrupled to 20-40 GHz
with some conversion loss.
Frequency doubling or quadru-
pling is accomplished by operating
the first gain stage at pinch-off (V
G1 = V P @ 1.2 volts). Stages 2, 3,
and 4 are biased for normal
amplification. The assembly
diagram shown in Figure 12b can
be used.
To operate the device as a fre-
quency tripler the drain voltage
can be reduced to approximately
2.5 volts and the gate voltage can
be set at about -0.4 volts or
adjusted to minimize second
harmonics if needed. Either of
Figures 12a or Figure 12b can be
used.
Contact your local Avago
Technologies sales representative
for additional information
concerning multiplier perfor-
mance and operating conditions.
Assembly Techniques
It is recommended that the RF
input and output connections be
made using either 500 lines/inch
(or equivalent) gold wire mesh.
The RF connections should be
kept as short as possible to
minimize inductance. The DC bias
supply wires can be 0.7 mil diam-
eter gold.
GaAs MMICs are ESD sensitive.
ESD preventive measures must be
employed in all aspects of storage,
handling, and assembly. MMIC
ESD precautions, handling
considerations, die attach and
bonding methods are critical
factors in successful GaAs MMIC
performance and reliability.
Avago application note #54, “GaAs
MMIC ESD, Die Attach and
Bonding Guidelines” provides
basic information on these
subjects.
Additional References
AN #46, “HMMC-5040 20–40 GHz
Amplifier”, AN #50, “HMMC-5040
As a 20– 40 GHz Multiplier” and
PN #3, “HMMC-5040 and
HMMC-5032 Demo, 20–32 GHz
High Gain Medium Power Amp.”
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