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参数资料
| 型号： | HMMC-1002 |
| 元件分类： | 衰减器 |
| 英文描述： | 0 MHz - 50000 MHz RF/MICROWAVE VARIABLE ATTENUATOR |
| 封装： | CHIP |
| 文件页数： | 1/8页 |
| 文件大小： | 97K |
| 代理商： | HMMC-1002 |
7-12
DC – 50 GHz Variable Attenuator
Technical Data
HMMC-1002
Features
Specified Frequency Range:
DC - 26.5 GHz
Return Loss: 10 dB
Minimum Attenuation:
2.0 dB
Maximum Attenuation:
30.0 dB
Description
The HMMC-1002 is a monolithic,
voltage variable, GaAs IC attenua-
tor that operates from DC to
50 GHz. It is fabricated using
MWTC’s MMICB process which
features an MBE epitaxial layer,
backside ground vias, and FET
gate lengths of approximately
0.4 mm. The variable resistive
elements of the HMMC-1002 are
two 750 mm wide series FETs
and four 200 mm wide shunt
FETs. The distributed topology of
the HMMC-1002 minimizes the
parasitic effects of its series and
shunt FETs, allowing the
HMMC-1002 to exhibit a wide
dynamic range across its full
bandwidth. An on-chip DC
reference circuit may be used to
maintain optimum VSWR for any
attenuation setting or to improve
the attenuation versus voltage
linearity of the attenuator circuit.
Absolute Maximum Ratings[1]
Symbol
Parameters/Conditions
Units
Min.
Max.
VDC-RF
DC Voltage to RF Ports
V
-0.6
+1.6
V1
V1 Control Voltage
V
-5.0
+0.5
V2
V1 Control Voltage
V
-5.0
+0.5
VDC
DC In/DC Out
V
-0.6
+1.0
Pin
RF Input Power
dBm
17
Tmina
Minimum Ambient
Operating Temperature
°C
-55
Tmaxa
Maximum Ambient
Operating Temperature
°C
+125
TSTG
Storage Temperature
°C
-65
+165
Tmax
Maximum Assembly Temp.
°C
+300
Note:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device.
Chip Size:
1470 x 610
m (57.9 x 24.0 mils)
Chip Size Tolerance:
± 10m(± 0.4mils)
Chip Thickness:
127
± 15m(5.0± 0.6mils)
RF Pad Dimensions:
60 x 70
m (2.4 x 2.8 mils), or larger
DC Pad Dimensions:
75 x 75
m (3.0 x 3.0 mils), or larger
5965-5452E
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