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参数资料
| 型号： | HMMC-1002 |
| 元件分类： | 衰减器 |
| 英文描述： | 0 MHz - 50000 MHz RF/MICROWAVE VARIABLE ATTENUATOR |
| 封装： | CHIP |
| 文件页数： | 3/8页 |
| 文件大小： | 97K |
| 代理商： | HMMC-1002 |
7-14
Applications
The HMMC-1002 is designed to be
used as a gain control block
in an AGC assembly. Because of
its wide dynamic range and
return loss performance, the
HMMC-1002 may also be used as
a broadband pulse modulator or
single-pole single-throw, non-
reflective switch.
Operation
The attenuation of the
HMMC-1002 is adjusted by
applying negative voltages to V1
and V2. V1 controls the drain-to-
source resistances of the series
FETs while V2 controls the drain-
to-source resistances of the shunt
FETs. For any HMMC-1002 the
values of V1 may be adjusted so
that the device attenuation versus
voltage is monotonic for both V1
and V2; however, this will slightly
degrade the input and output
return loss.
The attenuation of the
HMMC-1002 may also be con-
trolled using only a single input
voltage by utilizing the on-chip
DC reference circuit and the
driver circuit shown in Figure 4.
This circuit optimizes VSWR for
any attenuation setting. Because
of process variations, the values
of VREF, RREF, and RL are different
for each wafer if optimum
performance is required. Typical
values for these elements are
given. The ratio of the resistors
R1 and R2 determines the sensi-
tivity of the attenuation versus
voltage performance of the
attenuator. For more information
on the performance of the
HMMC-1002 and the driver
circuits previously mentioned see
MWTC’s Application Note #37,
“HMMC-1002 Attenuator: Attenua-
tion Control.” For more
S-parameter information, see
MWTC’s Application Note #44,
“HMMC-1002 Attenuator:
S-Parameters.”
Assembly Techniques
Solder die attach using a AuSn
solder preform is the recom-
mended assembly method;
however, an epoxy die attach
method using ABLEBOND
71-1LM1 or ABLEBOND 36-2
may also be employed. Gold
thermosonic wedge bonding with
0.7 mil wire is the recommended
method for bonding to the device.
Tool force should be
22 grams
± 1 gram,stagetempera-
ture is 150
± 2 °C,andultrasonic
power and duration of 64
± 1 dB
and 76
± 8 msec, respectively.
The top and bottom metallization
is gold.
For more detailed information
see HP application note #999
“GaAs MMIC Assembly and
Handling Guidelines.”
GaAs MMICs are ESD sensitive.
Proper precautions should be used
when handling these devices.
RFIN
RFOUT
DCIN
V1
DCOUT
V2
DC Reference Circuit
Figure 1. HMMC-1002 Schematic.
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