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参数资料
| 型号： | HMMC-5021 |
| 元件分类： | 放大器 |
| 英文描述： | 2000 MHz - 22000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 0.1173 X 0.0303 INCH, DIE |
| 文件页数： | 1/6页 |
| 文件大小： | 113K |
| 代理商： | HMMC-5021 |
Avago HMMC-5021 (2–22 GHz),
HMMC-5026 (2–26.5 GHz)
GaAs MMIC Traveling Wave Amplifiers
Data Sheet
Description
The HMMC-5021/26 is a broadband GaAs MMIC Trav-
eling Wave Amplifier designed for high gain and
moderate output power over the full 2 to 26.5 GHz
frequency range. Seven MESFET cascode stages provide
a flat gain response, making the HMMC-5021/26 an ideal
wideband gain block. Optical lithography is used to
produce gate lengths of
≈0.4 m. The HMMC-5021/26
incorporates advanced MBE technology, Ti-Pt-Au gate
metallization, silicon nitride passivation, and polyimide
for scratch protection.
Features
Wide-frequency range:
2 – 26.5 GHz
High gain:
9.5 dB
Gain flatness:
±0.75 dB
Return loss:
Input: -14 dB
Output: -13 dB
Low-frequency operation capability:
<2 GHz
Gain control:
35 dB dynamic range
Moderate power:
20 GHz: P-1dB: 18 dBm
Psat: 20 dBm
26.5 GHz: P-1dB: 15 dBm
Psat: 17 dBm
Absolute Maximum Ratings[1]
Symbol
Parameters/Conditions
Units
Min.
Max.
VDD
Positive Drain Voltage
V
8.0
IDD
Total Drain Current
mA
250
VG1
First Gate Voltage
V
-5
0
IG1
First Gate Current
mA
-9
+5
VG2
[2]
Second Gate Voltage
V
-2.5
+3.5
IG2
Second Gate Current
mA
-7
PDC
DC Power Dissipation
watts
2.0
Pin
CW Input Power
dBm
23
Tch
Operating Channel Temp.
°C
+150
Tcase
Operating Case Temp.
°C
-55
Tstg
Storage Temperature
°C
-65
+165
Tmax
Max. Assembly Temp.
°C
300
(for 60 seconds max.)
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage to this device. T
A = 25°C except for Tch, TSTG, and Tmax.
2. Minimum voltage on V
G2 must not violate the following: VG2(min) > VDD - 9 volts.
Chip Size:
2980 x 770
m (117.3 x 30.3 mils)
Chip Size Tolerance:
±10 m (±0.4 mils)
Chip Thickness:
127
± 15 m (5.0 ± 0.6 mils)
Pad Dimensions:
75 x 75
m (2.95 x 2.95 mils), or larger
相关PDF资料 |
PDF描述 |
|---|---|
| HMMC-5026 | 2000 MHz - 26500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5023 | 21200 MHz - 26500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5025 | 2000 MHz - 50000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5025 | 2000 MHz - 50000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5026 | 2000 MHz - 26500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMMC-5022 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 22GHZ 8V CHIP - Gel-pak, waffle pack, wafer, diced wafer on film 制造商:Agilent Technologies 功能描述:ML-GAAS ATTEN CHIP |
| HMMC-5023 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 26.5GHZ 7V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5025 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 50GHZ 7V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5026 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 26.5GHZ 8V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5027 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 26.5GHZ 8V CHIP - Gel-pak, waffle pack, wafer, diced wafer on film |
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