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参数资料
| 型号： | HMMC-5032 |
| 元件分类： | 放大器 |
| 英文描述： | 17700 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 0.0551 X 0.0307 INCH, DIE |
| 文件页数： | 2/7页 |
| 文件大小： | 156K |
| 代理商： | HMMC-5032 |
2
DC Specifications/Physical Properties[1]
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
V
D1, VD2
Drain Supply Operating Voltage
V
2
4.5
5
I
D1
First Stage Drain Supply Current (V
DD = 4.5V, VG1 -0.8V)
mA
100
140
ID2
Second Stage Drain Supply Current (VDD = 4.5V, VGG -0.8V)
mA
150
320
VG1, VG2
Gate Supply Operating Voltages (IDD 250 mA)
V
-0.8
VP
Pinch-Off Voltage (VDD = 4.5V, IDD ≤ 10 mA)
V
-2
-1.2
Det. Bias
Detector Bias Voltage (Optional)
V
D1,2
5
θ
ch-bs
Thermal Resistance[2] (Channel-to-Backside at T
ch = 160°C)
°C/W
67
Tch
Channel Temperature[3] (TA= 85°C, MTTF >10
6 hrs, V
DD= 4.5 V, IDD = 250 mA)
°C
160
Notes:
1. Backside ambient operating temperature TA = 25°C unless otherwise noted.
2. Thermal resistance (in
°C/Watt) at a channel temperature T(°C) can be estimated using the equation: θ(T) = θ
ch-bs x [T(°C) + 273]/[160°C + 273].
3. Derate MTTF by a factor of two for every 8
°C above T
ch.
HMMC-5032 RF Specifications, (TA = 25°C, ZO = 50, VDD = 4.5 V, IDD = 250 mA)
Low Band
Upper Band
Specifications
Symbol
Parameters/Conditions
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
BW
Operating Bandwidth
GHz
17.7
26.5
25
31.5
Gain
Small Signal Gain
dB
7
8
6
7
Gain/T
Temperature Coefficient of Gain
dB/
°C
0.02
P-1dB
Output Power at 1 dB Gain Compression
dBm
21
22
21
22
Psat
Saturated Output Power[1]
dBm
24
RLin(min)
Minimum Input Return Loss
dB
8
9
10
15
RLout(min)
Minimum Output Return Loss
dB
9
10
15
20
Isolation
Minimum Reverse Isolation
dB
35
30
Note:
1. Devices operating continuously beyond 1 dB gain compression may experience power degradation.
相关PDF资料 |
PDF描述 |
|---|---|
| HMMC-5033 | 17700 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMMC-5038 | 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5040 | 20000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5200 | 0 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5200 | 0 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMMC-5033 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5034 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:37-43 GHz Amplifier |
| HMMC-5038 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:38 GHz LNA |
| HMMC-5040 | 制造商:Agilent Technologies 功能描述:RF AMP CHIP SGL GP 40GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5200 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GAIN AMP CHIP - Gel-pak, waffle pack, wafer, diced wafer on film |
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