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参数资料
| 型号： | HMMC-5032 |
| 元件分类： | 放大器 |
| 英文描述： | 17700 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 0.0551 X 0.0307 INCH, DIE |
| 文件页数： | 4/7页 |
| 文件大小： | 156K |
| 代理商： | HMMC-5032 |
4
Figure 2. Gain and Isolation vs. Frequency.
12
10
8
6
4
2
0
10
20
30
40
50
60
SMALL-SIGNAL
GAIN
(dB)
ISOLATION
(dB)
10
15
20
30
25
40
35
45
FREQUENCY (GHz)
VDD = 4.5 V, IDD = 250 mA, DET Bias = Open
Gain
Isolation
Spec Range
17.7 – 31.5 GHz
Figure 3. Input and Output Return Loss vs.
Frequency.
0
6
12
18
24
30
0
6
12
18
24
30
INPUT
RETURN
LOSS
(dB)
OUTPUT
RETURN
LOSS
(dB)
10
15
20
30
25
40
35
45
FREQUENCY (GHz)
VDD = 4.5 V, IDD = 250 mA, DET Bias = Open
Output R.L.
Spec Range
17.7 – 31.5 GHz
Input R.L.
Figure 4. Gain vs. Temperature.
12
11
10
9
8
7
6
5
4
SMALL-SIGNAL
GAIN
(dB)
-55
-35
-15
25
565
45
85
TEMPERATURE (TA, °C)
VDD = 4.5 V, IDD = 250 mA
(Device mounted in a connectorized package)
Figure 5. Output Power vs. Total Drain Current.
30
28
26
24
22
20
18
16
14
12
10
8
30
28
26
24
22
20
18
16
14
12
10
8
P
-1
dB
(dBm)
P
sat
(dBm)
190
220
250
280
310
IDD (mA)
VDD = 4.5 V, IDD = 250 mA, Freq. = 28 GHz
Psat
P-1dB
Figure 6. Output Power vs. Frequency.
29
27
25
23
21
19
17
15
29
27
25
23
21
19
17
15
P
-1
dB
(dBm)
P
sat
(dBm)
17
19
21
23
25
27
29
31
33
FREQUENCY (GHz)
VDD = 4.5 V, IDD = 250 mA
Psat
P-1dB
Figure 7. Detector Voltages vs. Output Power
for Various Detector Bias Voltages.
26
22
18
14
10
6
2
0
130
110
90
70
50
30
10
0
(RF
DET)
–
(DC
DET)
(dBmv)
(RF
DET)
–
(DC
DET)
(mv)
11
13
15
19
17
21
23 24
RF OUTPUT POWER (dBm)
VDD = 4.5 V, IDD = 250 mA, Freq. = 28 GHz
DET BIAS = Open
Figure 8. Gain Compression and Efficiency vs.
Power Out.
12
10
8
6
4
2
16
14
12
10
8
6
4
2
GAIN
(dB)
EFFICIENCY
(%)
15
17
19
21
25
23
26
RF OUTPUT POWER (dBm)
VDD = 4.5 V, IDD = 250 mA, Freq. = 28 GHz
Effic. (%)
Gain
Figure 9. Gain and Total Drain Current vs.
Output Power.
12
10
8
6
4
2
400
360
320
280
240
200
GAIN
(dB)
I DD
(mA)
15
16
17
18
19
20
21
22
23
24
RF OUTPUT POWER (dBm)
VDD = 4.5 V, Freq. = 28 GHz
IDD
Gain
0.02 dB/
°C
HMMC-5032 Typical Performance Characteristics
相关PDF资料 |
PDF描述 |
|---|---|
| HMMC-5033 | 17700 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMMC-5038 | 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5040 | 20000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5200 | 0 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5200 | 0 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMMC-5033 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5034 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:37-43 GHz Amplifier |
| HMMC-5038 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:38 GHz LNA |
| HMMC-5040 | 制造商:Agilent Technologies 功能描述:RF AMP CHIP SGL GP 40GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5200 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GAIN AMP CHIP - Gel-pak, waffle pack, wafer, diced wafer on film |
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