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参数资料
| 型号： | HN1B01FDW1T1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Complementary Dual General Purpose Amplifier Transistor(互补型双通用放大器晶体管) |
| 中文描述： | 200 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CASE 318F-05, SC-74, 6 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 52K |
| 代理商： | HN1B01FDW1T1 |
Semiconductor Components Industries, LLC, 2005
March, 2005 Rev. 2
Publication Order Number:
HN1B01FDW1T1/D
HN1B01FDW1T1
Complementary Dual
General Purpose
Amplifier Transistor
PNP and NPN Surface Mount
Features
High Voltage and High Current: V
CEO = 50 V, IC = 200 mA
High h
FE: hFE = 200
X400
Moisture Sensitivity Level: 1
ESD Rating
Human Body Model: 3A
Machine Model: C
PbFree Package is Available
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
CollectorBase Voltage
V(BR)CBO
60
Vdc
CollectorEmitter Voltage
V(BR)CEO
50
Vdc
EmitterBase Voltage
V(BR)EBO
7.0
Vdc
Collector Current Continuous
IC
200
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
PD
380
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
55 to +150
°C
MARKING DIAGRAM
http://onsemi.com
Q1
(4)
(5)
(6)
(1)
(2)
(3)
Q2
SC74
CASE 318F
STYLE 3
1
2
3
R9 M
R9
= Device Code
M
= Date Code
6
5
4
Device
Package
Shipping
ORDERING INFORMATION
HN1B01FDW1T1
SC74
3000/Tape & Reel
HN1B01FDW1T1G
SC74
(PbFree)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HN1B01FDW1T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Complementary Dual General Purpose Amplifier Transistor |
| HN1B01FDW1T1G | 功能描述:两极晶体管 - BJT 200mA 60V Dual Complementary RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| HN1B01FGR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP |
| HN1B01F-GR(TE85L,F | 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN/PNP Dual 50V 0.15A hfe200 |
| HN1B01FU | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
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