- 您现在的位置：买卖IC网 > PDF目录175387 > HN1B01FDW1T1 (ON SEMICONDUCTOR) Complementary Dual General Purpose Amplifier Transistor(互补型双通用放大器晶体管) PDF资料下载
参数资料
| 型号： | HN1B01FDW1T1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Complementary Dual General Purpose Amplifier Transistor(互补型双通用放大器晶体管) |
| 中文描述： | 200 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CASE 318F-05, SC-74, 6 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 52K |
| 代理商： | HN1B01FDW1T1 |
HN1B01FDW1T1
http://onsemi.com
2
Q1: PNP
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
CollectorEmitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
V(BR)CEO
50
Vdc
CollectorBase Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
Vdc
EmitterBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
7.0
Vdc
CollectorBase Cutoff Current
(VCB = 45 Vdc, IE = 0)
ICBO
0.1
mAdc
CollectorEmitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0, TA = 80°C)
ICEO
0.1
2.0
1.0
mAdc
DC Current Gain (Note 1)
(VCE = 6.0 Vdc, IC = 2.0 mAdc)
hFE
200
400
CollectorEmitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
0.15
0.3
Vdc
Q2: NPN
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
CollectorEmitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
V(BR)CEO
50
Vdc
CollectorBase Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
Vdc
EmitterBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
7.0
Vdc
CollectorBase Cutoff Current
(VCB = 45 Vdc, IE = 0)
ICBO
0.1
mAdc
CollectorEmitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0, TA = 80°C)
ICEO
0.1
2.0
1.0
mAdc
DC Current Gain (Note 1)
(VCE = 6.0 Vdc, IC = 2.0 mAdc)
hFE
200
400
CollectorEmitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
0.15
0.25
Vdc
1. Pulse Test: Pulse Width
≤ 300 ms, D.C. ≤ 2%.
相关PDF资料 |
PDF描述 |
|---|---|
| HN1B01FDW1T1G | Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount |
| HN1C01FGRTE85R | 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| HN1C01FUGRTE85R | 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| HN2D02FUTW1T1G | Ultra High Speed Switching Diode SC88; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 |
| HN2D02FUTW1T1 | Ultra High Speed Switching Diodes(超高速开关二极管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HN1B01FDW1T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Complementary Dual General Purpose Amplifier Transistor |
| HN1B01FDW1T1G | 功能描述:两极晶体管 - BJT 200mA 60V Dual Complementary RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| HN1B01FGR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP |
| HN1B01F-GR(TE85L,F | 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN/PNP Dual 50V 0.15A hfe200 |
| HN1B01FU | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
发布紧急采购，3分钟左右您将得到回复。