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参数资料
| 型号： | HN1B01FDW1T1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Complementary Dual General Purpose Amplifier Transistor(互补型双通用放大器晶体管) |
| 中文描述： | 200 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CASE 318F-05, SC-74, 6 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 52K |
| 代理商： | HN1B01FDW1T1 |
HN1B01FDW1T1
http://onsemi.com
4
Typical Electrical Characteristics: NPN Transistor
Figure 7. Collector Saturation Voltage
01
2
3
4
6
5
280
0
40
I C
,COLLECT
OR
CURRENT
(mA)
VCE, COLLECTOREMITTER VOLTAGE (V)
80
120
160
Figure 8. DC Current Gain
1
10
100
1000
10
h
FE
,DC
CURRENT
GAIN
IC, COLLECTOR CURRENT (mA)
100
TA = 25°C
6.0 mA
1.0 mA
IB = 0.2 mA
VCE = 1.0 V
TA = 100°C
25
°C
25
°C
Figure 9. DC Current Gain
1
10
1000
100
1000
10
h
FE
,DC
CURRENT
GAIN
IC, COLLECTOR CURRENT (mA)
100
Figure 10. VCE(sat) versus IC
1
10
100
1000
1
0.01
V
CE(sat)
,MAXIMUM
COLLECT
OR
VOL
T
AGE
(V)
IC, COLLECTOR CURRENT (mA)
0.1
IC/IB = 10
TA = 100°C
25
°C
25
°C
TA = 100°C
25
°C
25
°C
Figure 11. VBE(sat) versus IC
1
10
1000
100
10
0.1
BASEEMITTER
SA
TURA
TION
VOL
T
AGE
(V)
IC, COLLECTOR CURRENT (mA)
1
Figure 12. BaseEmitter Voltage
0
0.1
10,000
I B
,BASE
CURRENT
(m
A)
VBE, BASEEMITTER VOLTAGE (V)
0.1
COMMON EMITTER
VCE = 6 V
TA = 100°C
25
°C
25
°C
TA = 25°C
IC/IB = 10
1
10
100
1000
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
5.0 mA
3.0 mA
200
240
2.0 mA
0.5 mA
VCE = 6.0 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HN1B01FDW1T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Complementary Dual General Purpose Amplifier Transistor |
| HN1B01FDW1T1G | 功能描述:两极晶体管 - BJT 200mA 60V Dual Complementary RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| HN1B01FGR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP |
| HN1B01F-GR(TE85L,F | 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN/PNP Dual 50V 0.15A hfe200 |
| HN1B01FU | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
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