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参数资料
| 型号： | HSMS-282K-BLKG |
| 英文描述： | Surface Mount RF Schottky Barrier Diodes |
| 中文描述： | 表面贴装射频肖特基二极管 |
| 文件页数： | 2/14页 |
| 文件大小： | 213K |
| 代理商： | HSMS-282K-BLKG |
2
Electrical Specifications T
C
= 25
°
C, Single Diode
[4]
Maximum
Forward
Voltage
V
F
(V) @
I
F
(mA)
Maximum
Reverse
Leakage
I
R
(nA) @ Capacitance Resistance
V
R
(V)
C
T
(pF)
Minimum
Breakdown
Voltage
V
BR
(V)
Maximum
Forward
Voltage
V
F
(mV)
Typical
Dynamic
Part
Number
HSMS
[5]
Package
Marking
Code
Maximum
Lead
Code
Configuration
R
D
(
)
[6]
2820
2822
2823
2824
2825
2827
2828
2829
282B
282C
282E
282F
282K
C0
[3]
C2
[3]
C3
[3]
C4
[3]
C5
[3]
C7
[3]
C8
[3]
C9
[3]
C0
[7]
C2
[7]
C3
[7]
C4
[7]
CK
[7]
0
2
3
4
5
7
8
9
B
C
E
F
K
Single
Series
Common Anode
Common Cathode
Unconnected Pair
Ring Quad
[5]
Bridge Quad
[5]
Cross-over Quad
Single
Series
Common Anode
Common Cathode
High Isolation
Unconnected Pair
Unconnected Trio
Common Cathode Quad
Common Anode Quad
Bridge Quad
Ring Quad
15
340
0.5
10
100
1
1.0
12
282L
282M
282N
282P
282R
CL
[7]
HH
[7]
NN
[7]
CP
[7]
OO
[7]
L
M
N
P
R
Test Conditions
I
R
= 100
μ
A
I
F
= 1 mA
[1]
V
F
= 0 V
f = 1 MHz
[2]
I
F
= 5 mA
Notes:
1.
V
F
for diodes in pairs and quads in 15 mV maximum at 1 mA.
2.
C
TO
for diodes in pairs and quads is 0.2 pF maximum.
3. Package marking code is in white.
4. Effective Carrier Lifetime (
τ
) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
5. See section titled
“
Quad Capacitance.
”
6. R
D
= R
S
+ 5.2
at 25
°
C and I
f
= 5 mA.
7. Package marking code is laser marked.
Absolute Maximum Ratings
[1]
T
C
= 25
°
C
Symbol
Parameter
Forward Current (1
μ
s Pulse) Amp
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance
[2]
Unit
SOT-23/SOT-143 SOT-323/SOT-363
I
f
P
IV
T
j
T
stg
θ
jc
1
1
15
150
V
°
C
°
C
15
150
-65 to 150
500
-65 to 150
150
°
C/W
Notes:
1.
Operation in excess of any one of these conditions may result in permanent damage to
the device.
T
C
= +25
°
C, where T
C
is defined to be the temperature at the package pins where
contact is made to the circuit board.
2.
Notes:
1.
Package marking provides
orientation and identification.
See
“
Electrical Specifications
”
for
appropriate package marking.
2.
Pin Connections and
Package Marking
G
1
2
3
6
5
4
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PDF描述 |
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| HSMS-282K-TR1G | Surface Mount RF Schottky Barrier Diodes |
| HSMS-282K-TR2G | Surface Mount RF Schottky Barrier Diodes |
| HSMS-282L-BLKG | Surface Mount RF Schottky Barrier Diodes |
| HSMS-282L-TR1G | Surface Mount RF Schottky Barrier Diodes |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HSMS-282K-BLKG | 制造商:Avago Technologies 功能描述:Diode |
| HSMS-282K-G | 制造商:Avago Technologies 功能描述:Diode, RF,Schottky,Mixer, dual,HSMS-282K |
| HSMS-282K-TR1 | 功能描述:DIODE SCHOTTKY RF 15V 1A SOT-363 RoHS:否 类别:分离式半导体产品 >> RF 二极管 系列:- 标准包装:3,000 系列:- 二极管类型:PIN - 单 电压 - 峰值反向(最大):50V 电流 - 最大:50mA 电容@ Vr, F:0.4pF @ 50V，1MHz 电阻@ Vr, F:4.5 欧姆 @ 10mA，100MHz 功率耗散（最大）:100mW 封装/外壳:SC-70，SOT-323 供应商设备封装:3-MCP 包装:带卷 (TR) |
| HSMS282K-TR1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:ARRAY OF INDEPENDENT DIODES|TSOP |
| HSMS282KTR1G | 制造商:Avago Technologies 功能描述: |
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