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参数资料
型号： HSMS-282K-BLKG
英文描述： Surface Mount RF Schottky Barrier Diodes
中文描述： 表面贴装射频肖特基二极管
文件页数： 8/14页
文件大小： 213K
代理商： HSMS-282K-BLKG
8
lower cost solution is available
[4]
.
Illustrated schematically in
Figure 19, this circuit uses diode
D2 and its associated passive
components to cancel all even
order harmonics at the detector
’
s
RF input. Diodes D3 and D4
provide temperature compensa-
tion as described above. All four
diodes are contained in a single
HSMS- 282R package, as illus-
trated in the layout shown in
Figure 20.
RF in
D1
R1
V+
R2
D3
C1
V
–
R4
D4
C1 = C2
≈
100 pF
R1 = R2 = R3 = R4 = 4.7 K
D1 & D2 & D3 & D4 = HSMS-282R
C2
D2
68
R3
Figure 19. Schematic of Sup-
pressed Harmonic Detector.
HSMS-282R
4.7 K
4.7 K
100 pF
100 pF
68
V
–
RF in
V+
Figure 20. Layout of Suppressed
Harmonic Detector.
Note that the forgoing discussion
refers to the output voltage being
extracted at point V+ with
respect to ground. If a differential
output is taken at V+ with respect
to V-, the circuit acts as a voltage
doubler.
Mixer applications
The HSMS-282x family, with its
wide variety of packaging, can be
used to make excellent mixers at
frequencies up to 6 GHz.
The HSMS-2827 ring quad of
matched diodes (in the SOT-143
package) has been designed for
double balanced mixers. The
smaller (SOT-363) HSMS-282R ring
quad can similarly be used, if the
quad is closed with external
connections as shown in Figure 21.
HSMS-282R
IF out
RF in
LO in
Figure 21. Double Balanced
Mixer.
Both of these networks require a
crossover or a three dimensional
circuit. A planar mixer can be
made using the SOT-143 cross-
over quad, HSMS-2829, as shown
in Figure 22. In this product, a
special lead frame permits the
crossover to be placed inside the
plastic package itself, eliminating
the need for via holes (or other
measures) in the RF portion of
the circuit itself.
HSMS-2829
IF out
RF in
LO in
Figure 22. Planar Double Bal-
anced Mixer.
A review of Figure 21 may lead to
the question as to why the
HSMS-282R ring quad is open on
the ends. Distortion in double
balanced mixers can be reduced
if LO drive is increased, up to the
point where the Schottky diodes
are driven into saturation. Above
this point, increased LO drive will
not result in improvements in
distortion. The use of expensive
high barrier diodes (such as those
fabricated on GaAs) can take
advantage of higher LO drive
power, but a lower cost solution
is to use a eight (or twelve) diode
ring quad. The open design of the
HSMS-282R permits this to easily
be done, as shown in Figure 23.
HSMS-282R
IF out
RF in
LO in
Figure 23. Low Distortion Double
Balanced Mixer.
This same technique can be used
in the single-balanced mixer.
Figure 24 shows such a mixer,
with two diodes in each spot
normally occupied by one. This
mixer, with a sufficiently high LO
drive level, will display low
distortion.
HSMS-282R
180
°
hybrid
IF out
LO in
RF in
Low pass
filter
Figure 24. Low Distortion Bal-
anced Mixer.
[4]
Alan Rixon and Raymond W. Waugh,
“
A Suppressed Harmonic Power Detector for Dual
Band
‘
Phones,
”
to be published.
相关PDF资料
PDF描述
HSMS-282K-TR1G Surface Mount RF Schottky Barrier Diodes
HSMS-282K-TR2G Surface Mount RF Schottky Barrier Diodes
HSMS-282L-BLKG Surface Mount RF Schottky Barrier Diodes
HSMS-282L-TR1G Surface Mount RF Schottky Barrier Diodes
HSMS-282L-TR2G Surface Mount RF Schottky Barrier Diodes
相关代理商/技术参数
参数描述
HSMS-282K-BLKG 制造商:Avago Technologies 功能描述:Diode
HSMS-282K-G 制造商:Avago Technologies 功能描述:Diode, RF,Schottky,Mixer, dual,HSMS-282K
HSMS-282K-TR1 功能描述:DIODE SCHOTTKY RF 15V 1A SOT-363 RoHS:否 类别:分离式半导体产品 >> RF 二极管 系列:- 标准包装:3,000 系列:- 二极管类型:PIN - 单 电压 - 峰值反向(最大):50V 电流 - 最大:50mA 电容@ Vr, F:0.4pF @ 50V，1MHz 电阻@ Vr, F:4.5 欧姆 @ 10mA，100MHz 功率耗散（最大）:100mW 封装/外壳:SC-70，SOT-323 供应商设备封装:3-MCP 包装:带卷 (TR)
HSMS282K-TR1 制造商:未知厂家 制造商全称:未知厂家 功能描述:ARRAY OF INDEPENDENT DIODES|TSOP
HSMS282KTR1G 制造商:Avago Technologies 功能描述:
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