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参数资料
| 型号： | HSMS-282K-BLKG |
| 英文描述： | Surface Mount RF Schottky Barrier Diodes |
| 中文描述： | 表面贴装射频肖特基二极管 |
| 文件页数： | 3/14页 |
| 文件大小： | 213K |
| 代理商： | HSMS-282K-BLKG |
3
Quad Capacitance
Capacitance of Schottky diode
quads is measured using an
HP4271 LCR meter. This
instrument effectively isolates
individual diode branches from
the others, allowing accurate
capacitance measurement of each
branch or each diode. The
conditions are: 20 mV R.M.S.
voltage at 1 MHz. Agilent defines
this measurement as
“
CM
”
, and it
is equivalent to the capacitance of
the diode by itself. The equivalent
diagonal and adjacent capaci-
tances can then be calculated by
the formulas given below.
In a quad, the diagonal capaci-
tance is the capacitance between
points A and B as shown in the
figure below. The diagonal
capacitance is calculated using
the following formula
C
x C
C
DIAGONAL
= _______ + _______
C
1
+ C
2
C
x C
4
C
3
+ C
4
C
1
C
2
C
4
C
3
A
B
C
The equivalent adjacent
capacitance is the capacitance
between points A and C in the
figure below. This capacitance is
calculated using the following
formula
1
C
ADJACENT
= C
1
+ ____________
1
––
+
+
––
C
2
C
3
––
1
C
4
This information does not apply
to cross-over quad diodes.
SPICE Parameters
Parameter
Units
HSMS-282x
B
V
C
J0
E
G
I
BV
I
S
N
R
S
P
B
P
T
M
V
pF
eV
A
A
15
0.7
0.69
1E-4
2.2E-8
1.08
6.0
0.65
2
0.5
V
C
j
R
j
R
S
R
= 8.33 X 10
-5
nT
I
b
+ I
s
where
I
b
= externally applied bias current in amps
I
s
= saturation current (see table of SPICE parameters)
T
= temperature,
°
K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-282x product,
please refer to Application Note AN1124.
R
S
= series resistance (see Table of SPICE parameters)
C
j
= junction capacitance (see Table of SPICE parameters)
Linear Equivalent Circuit Model
Diode Chip
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
相关PDF资料 |
PDF描述 |
|---|---|
| HSMS-282K-TR1G | Surface Mount RF Schottky Barrier Diodes |
| HSMS-282K-TR2G | Surface Mount RF Schottky Barrier Diodes |
| HSMS-282L-BLKG | Surface Mount RF Schottky Barrier Diodes |
| HSMS-282L-TR1G | Surface Mount RF Schottky Barrier Diodes |
| HSMS-282L-TR2G | Surface Mount RF Schottky Barrier Diodes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HSMS-282K-BLKG | 制造商:Avago Technologies 功能描述:Diode |
| HSMS-282K-G | 制造商:Avago Technologies 功能描述:Diode, RF,Schottky,Mixer, dual,HSMS-282K |
| HSMS-282K-TR1 | 功能描述:DIODE SCHOTTKY RF 15V 1A SOT-363 RoHS:否 类别:分离式半导体产品 >> RF 二极管 系列:- 标准包装:3,000 系列:- 二极管类型:PIN - 单 电压 - 峰值反向(最大):50V 电流 - 最大:50mA 电容@ Vr, F:0.4pF @ 50V，1MHz 电阻@ Vr, F:4.5 欧姆 @ 10mA，100MHz 功率耗散（最大）:100mW 封装/外壳:SC-70，SOT-323 供应商设备封装:3-MCP 包装:带卷 (TR) |
| HSMS282K-TR1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:ARRAY OF INDEPENDENT DIODES|TSOP |
| HSMS282KTR1G | 制造商:Avago Technologies 功能描述: |
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