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参数资料
| 型号： | HTIP122 |
| 厂商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶体管 |
| 文件页数： | 1/4页 |
| 文件大小： | 39K |
| 代理商： | HTIP122 |
HI-SINCERITY
MICROELECTRONICS CORP.
HTIP122
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6712
Issued Date : 1993.01.13
Revised Date : 2002.05.07
Page No. : 1/4
HTIP122
HSMC Product Specification
Description
The HTIP122 is designed for use in general purpose amplifier and low-
speed switching applications.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150
°
C
Junction Temperature ................................................................................................ +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C)................................................................................................. 65 W
Total Power Dissipation (Ta=25
°
C)................................................................................................... 2 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................................. 100 V
BVCEO Collector to Emitter Voltage.............................................................................................. 100 V
BVEBO Emitter to Base Voltage....................................................................................................... 5 V
IC Collector Current (Continuous)...................................................................................................... 5 A
IC Collector Current (Peak)................................................................................................................ 8 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
*BVCEO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(on)
*hFE1
*hFE2
Cob
Min.
100
100
-
-
-
-
-
-
1
1
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
200
500
2
2
4
2.5
-
-
200
Unit
V
V
uA
uA
mA
V
V
V
K
K
pF
Test Conditions
IC=1mA, IE=0
IC=100mA
VCB=100V
VCE=50V
VEB=5V
IC=3A, IB=12mA
IC=5A, IB=20mA
IC=3A, VCE=3V
IC=0.5A, VCE=3V
IC=3A, VCE=3V
VCB=10V, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
Darlington Schematic
R2
R1
C
E
B
TO-220
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