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参数资料
| 型号： | HTL145 |
| 厂商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶体管 |
| 文件页数： | 1/3页 |
| 文件大小： | 35K |
| 代理商： | HTL145 |
HI-SINCERITY
MICROELECTRONICS CORP.
HTL145
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6454-B
Issued Date : 1993.02.24
Revised Date : 2000.10.01
Page No. : 1/3
HSMC Product Specification
Description
The HTL145 is designed for high voltage low power switching
applications especially for use in telephone and telecommunication
circuits.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature..................................................................................... 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)...................................................................................... 1 W
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ...................................................................................... 500 V
VCEO Collector to Emitter Voltage................................................................................... 500 V
IC Collector Current....................................................................................................... 300 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
ICBO
ICER
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
500
500
-
-
-
-
-
-
50
50
40
10
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
10
1
200
500
3
900
-
300
-
-
30
Unit
V
V
uA
uA
nA
mV
V
mV
Test Conditions
IC=100uA
IC=1mA
VCB=500V
VCE=200V
VEB=6V
IC=20mA, IB=2mA
IC=100mA, IB=4mA
IC=20mA, IB=2mA
VCE=10V, IC=1mA
VCE=10V, IC=20mA
VCE=10V, IC=80mA
VCE=20V, IE=10mA
VCB=20V, f=1MHZ
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
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