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参数资料
型号： HUF75321D3S
厂商： FAIRCHILD SEMICONDUCTOR CORP
元件分类： JFETs
英文描述： 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs
中文描述： 20 A, 55 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件页数： 3/10页
文件大小： 227K
代理商： HUF75321D3S
2001 Fairchild Semiconductor Corporation
HUF75321D3, HUF75321D3S Rev. B
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . VDSS
55
V
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . VDGR
55
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
20
Figure 4
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
93
0.625
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . Tpkg
300
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 150oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BVDSS
ID = 250A, VGS = 0V (Figure 11)
55
-
V
Zero Gate Voltage Drain Current
IDSS
VDS = 50V, VGS = 0V
-
1
A
VDS = 45V, VGS = 0V, TC = 150
oC-
-
250
A
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
±100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250A (Figure 10)
2
-
4
V
Drain to Source On Resistance
rDS(ON)
ID = 20A, VGS = 10V (Figure 9)
-
0.030
0.036
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
RθJC
(Figure 3)
-
1.6
oC/W
Thermal Resistance Junction to Ambient
RθJA
TO-251, TO-252
-
100
oC/W
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
VDD = 30V, ID 20A,
RL = 1.5, VGS = 10V,
RGS = 25
--
100
ns
Turn-On Delay Time
td(ON)
-11
-
ns
Rise Time
tr
-55
-
ns
Turn-Off Delay Time
td(OFF)
-47
-
ns
Fall Time
tf
-66
-
ns
Turn-Off Time
tOFF
--
170
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Qg(TOT)
VGS = 0V to 20V
VDD = 30V,
ID 20A,
RL = 1.5
Ig(REF) = 1.0mA
(Figure 13)
-36
44
nC
Gate Charge at 10V
Qg(10)
VGS = 0V to 10V
-
21
26
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to 2V
-
1.3
1.6
nC
Gate to Source Gate Charge
Qgs
-3-
nC
Reverse Transfer Capacitance
Qgd
-9-
nC
HUF75321D3, HUF75321D3S
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相关代理商/技术参数
参数描述
HUF75321D3ST 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUF75321D3ST_S2457 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF75321P3 功能描述:MOSFET 35A 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUF75321S3 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUF75321S3S 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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