- 您现在的位置：买卖IC网 > PDF目录18736 > HUF75344P3 (Fairchild Semiconductor)MOSFET N-CH 55V 75A TO-220AB PDF资料下载
参数资料
| 型号： | HUF75344P3 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 75A TO-220AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 400 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8 毫欧 @ 75A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 210nC @ 20V |
| 输入电容 (Ciss) @ Vds： | 3200pF @ 25V |
| 功率 - 最大： | 285W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | HUF75344P3-ND HUF75344P3FS |
HUF75344G3, HUF75344P3
Data Sheet
N-Channel UltraFET Power MOSFET
55 V, 75 A, 8 m?
These N-Channel power MOSFETs are manufactured
using the innovative UltraFET process. This advanced
process technology achieves the lowest possible on-
resistance per silicon area, resulting in outstanding
performance. This device is capable of withstanding high
energy in the avalanche mode and the diode exhibits very
low reverse recovery time and stored charge. It was
designed for use in applications where power efficiency is
important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery-
operated products.
Formerly developmental type TA75344.
October 20 13
Features
? 75A, 55V
? Simulation Models
- Temperature Compensated PSPICE? and SABER?
Models
- Thermal Impedance PSPICE and SABER Models
Available on the web at: www.fairchildsemi.com
? Peak Current vs Pulse Width Curve
? UIS Rating Curve
? Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER
HUF75344G3
HUF75344P3
PACKAGE
TO-247
TO-220AB
BRAND
75344G
75344P
G
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(TAB)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
?2004 Fairchild Semiconductor Corporation
HUF75344G3, HUF75344P3 Rev. C0
相关PDF资料 |
PDF描述 |
|---|---|
| XBP24-ACI-001 | MODULE 802.15.4 100MW CHIP ANT |
| XB24-ACI-001 | MODULE 802.15.4 1MW W/CHIP ANT |
| IXFK90N20Q | MOSFET N-CH 200V 90A TO-264AA |
| X09-009NSC-TX | MOD RF TX 900MHZ 9600BPS W/RPSMA |
| UPC2756TB-A | IC MMIC DWN-CNVRTR SOT-363 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HUF75344P3_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75344S3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HUF75344S3S | 制造商:Harris Corporation 功能描述: |
| HUF75344S3ST | 功能描述:MOSFET 55V Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUF75345G3 | 功能描述:MOSFET 75a 55V 0.007Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。