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| 型号： | HUF75344P3 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 75A TO-220AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 400 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8 毫欧 @ 75A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 210nC @ 20V |
| 输入电容 (Ciss) @ Vds： | 3200pF @ 25V |
| 功率 - 最大： | 285W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | HUF75344P3-ND HUF75344P3FS |
HUF75344G3, HUF75344P3
Absolute Maximum Ratings
T C = 25 o C, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . V DSS
Drain to Gate Voltage (R GS = 20k ? ) (Note 1) . . . . . . . . . . . . . V DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D
Derate Above 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .T J , T STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . T L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . T pkg
55
55
± 20
75
Figure 4
Figure 6
285
1.90
-55 to 175
300
260
V
V
V
A
W
W/ o C
o C
o C
o C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T J = 25 o C to 150 o C.
Electrical Specifications
T C = 25 o C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
BV DSS
I DSS
I GSS
I D = 250 μ A, V GS = 0V (Figure 11)
V DS = 50V, V GS = 0V
V DS = 45V, V GS = 0V, T C = 150 o C
V GS = ± 20V
55
-
-
-
-
-
-
-
-
1
250
± 100
V
μ A
μ A
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
V GS(TH)
r DS(ON)
V GS = V DS , I D = 250 μ A (Figure 10)
I D = 75A, V GS = 10V (Figure 9)
2
-
-
6.5
4
8.0
V
m ?
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R θ JC
R θ JA
(Figure 3)
TO-247
TO-220
-
-
-
-
-
-
0.52
30
62
o C/W
o C/W
o C/W
SWITCHING SPECIFICATIONS (V GS = 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
t ON
t d(ON)
t r
t d(OFF)
t f
t OFF
V DD = 30V, I D ? 75A,
R L = 0.4 ? , V GS = 10V,
R GS = 3.0 ?
-
-
-
-
-
-
-
13
125
46
57
-
187
-
-
-
-
147
ns
ns
ns
ns
ns
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Reverse Transfer Capacitance
Q g(TOT)
Q g(10)
Q g(TH)
Q gs
Q gd
V GS = 0V to 20V
V GS = 0V to 10V
V GS = 0V to 2V
V DD = 30V,
I D ? 75A,
R L = 0.4 ?
I g(REF) = 1.0mA
(Figure 13)
-
-
-
-
-
175
90
5.9
14
39
210
108
7.0
-
-
nC
nC
nC
nC
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C ISS
C OSS
C RSS
V DS = 25V, V GS = 0V,
f = 1MHz
(Figure 12)
-
-
-
3200
1170
310
-
-
-
pF
pF
pF
?2004 Fairchild Semiconductor Corporation
HUF75344G3, HUF75344P3 Rev. C0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HUF75344P3_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75344S3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HUF75344S3S | 制造商:Harris Corporation 功能描述: |
| HUF75344S3ST | 功能描述:MOSFET 55V Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUF75345G3 | 功能描述:MOSFET 75a 55V 0.007Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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