- 您现在的位置：买卖IC网 > PDF目录18736 > HUF75344P3 (Fairchild Semiconductor)MOSFET N-CH 55V 75A TO-220AB PDF资料下载
参数资料
| 型号： | HUF75344P3 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 7/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 75A TO-220AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 400 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8 毫欧 @ 75A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 210nC @ 20V |
| 输入电容 (Ciss) @ Vds： | 3200pF @ 25V |
| 功率 - 最大： | 285W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | HUF75344P3-ND HUF75344P3FS |
HUF75344G3, HUF75344P3
PSPICE Electrical Model
.SUBCKT HUF75337 2 1 3 ;
CA 12 8 4.9e-9
CB 15 14 4.75e-9
rev 3 Feb 1999
LDRAIN
CIN 6 8 2.85e-9
10
DPLCAP
5
DRAIN
2
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
RSLC2
RSLC1
51
5
ESLC
51
DBREAK
11
RLDRAIN
EBREAK 11 7 17 18 59.7
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
LGATE
-
ESG
+
EVTEMP
6
8
EVTHRES
+ 19 -
8
50
RDRAIN
16
21
+
17
EBREAK 18
-
MWEAK
DBODY
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 2.6e-9
LSOURCE 3 7 1.1e-9
GATE
1
RLGATE
RGATE +
9 20
18 -
22
6
CIN
MSTRO
8
MMED
7
LSOURCE
SOURCE
3
KGATE LSOURCE LGATE 0.0085
RSOURCE
RLSOURCE
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
12
S1A
13
8
S2A
14
13
15
17
RBREAK
18
RBREAK 17 18 RBREAKMOD 1
S1B
S2B
RVTEMP
RDRAIN 50 16 RDRAINMOD 1.94e-3
RGATE 9 20 0.36
RLDRAIN 2 5 10
RLGATE 1 9 26
RLSOURCE 3 7 11
RSLC1 5 51 RSLCMOD 1e-6
CA
13
+
EGS
-
6
8
CB
+
EDS
-
5
8
14
8
IT
19
-
VBAT
+
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 3.5e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
RVTHRES
22
S1A
S1B
S2A
S2B
6 12 13 8 S1AMOD
13 12 13 8 S1BMOD
6 15 14 13 S2AMOD
13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*400),3))}
.MODEL DBODYMOD D (IS = 2.95e-12 RS = 2.6e-3 TRS1 = 1.05e-3 TRS2 = 5.0e-7 CJO = 5.19e-9 TT = 5.9e-8 M = 0.55)
.MODEL DBREAKMOD D (RS = 1.65e-1 IKF = 30 TRS1 = 1.15e-4 TRS2 = 2.27e-6)
.MODEL DPLCAPMOD D (CJO = 5.40e-9 IS = 1e-30 N=1 M = 0.88 )
.MODEL MMEDMOD NMOS (VTO = 3.29 KP = 5.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.36)
.MODEL MSTROMOD NMOS (VTO = 3.83 KP = 123 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.90 KP =0.04 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.6)
.MODEL RBREAKMOD RES (TC1 = 1.15e-3 TC2 = 2.0e-7)
.MODEL RDRAINMOD RES (TC1 = 1.37e-2 TC2 = 3.85e-5)
.MODEL RSLCMOD RES (TC1 = 1.45e-4 TC2 = 2.11e-6)
.MODEL RSOURCEMOD RES (TC1 = 0 TC2 = 0)
.MODEL RVTHRESMOD RES (TC1 = -3.7e-3 TC2 = -1.6e-5)
.MODEL RVTEMPMOD RES (TC1 = -2.4e-3 TC2 = 7e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5
.MODEL S1BMOD VSWITCH (RON = 1e-5
.MODEL S2AMOD VSWITCH (RON = 1e-5
.MODEL S2BMOD VSWITCH (RON = 1e-5
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
VON = -6.9 VOFF= -3.9)
VON = -3.9 VOFF= -6.9)
VON = -2.99 VOFF= 2.39)
VON = 2.39 VOFF= -2.99)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options ; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
?2004 Fairchild Semiconductor Corporation
HUF75344G3, HUF75344P3 Rev. C0
相关PDF资料 |
PDF描述 |
|---|---|
| XBP24-ACI-001 | MODULE 802.15.4 100MW CHIP ANT |
| XB24-ACI-001 | MODULE 802.15.4 1MW W/CHIP ANT |
| IXFK90N20Q | MOSFET N-CH 200V 90A TO-264AA |
| X09-009NSC-TX | MOD RF TX 900MHZ 9600BPS W/RPSMA |
| UPC2756TB-A | IC MMIC DWN-CNVRTR SOT-363 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HUF75344P3_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75344S3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HUF75344S3S | 制造商:Harris Corporation 功能描述: |
| HUF75344S3ST | 功能描述:MOSFET 55V Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUF75345G3 | 功能描述:MOSFET 75a 55V 0.007Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。