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参数资料
型号： HUFA75309T3ST
厂商： FAIRCHILD SEMICONDUCTOR CORP
元件分类： JFETs
英文描述： 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET
中文描述： 3 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
文件页数： 2/8页
文件大小： 175K
代理商： HUFA75309T3ST
2001 Fairchild Semiconductor Corporation
HUFA75309T3ST Rev. B
Absolute Maximum Ratings
TA = 25
oC, Unless Otherwise Specified
HUFA75309T3ST
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
55
V
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
55
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20V
V
Drain Current
Continuous (Note 2) (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
3
Figure 5
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Figures 6, 14, 15
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.1
9.09
W
mW/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
Electrical Specifications
TA = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 250A, VGS = 0V (Figure 11)
55
-
V
Gate to Source Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250A (Figure 10)
2
-
4
V
Zero Gate Voltage Drain Current
IDSS
VDS = 50V, VGS = 0V
-
1
A
VDS = 45V, VGS = 0V, TA = 150
oC
-
250
A
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
100
nA
Drain to Source On Resistance
rDS(ON)
ID = 3A, VGS = 10V (Figure 9)
-
0.057
0.070
Turn-On Time
tON
VDD = 30V, ID 3A, RL = 10,
VGS = 10V, RGS = 28
-
45
ns
Turn-On Delay Time
td(ON)
-8
-
ns
Rise Time
tr
-20-
ns
Turn-Off Delay Time
td(OFF)
-12-
ns
Fall Time
tf
-28-
ns
Turn-Off Time
tOFF
-
65
ns
Total Gate Charge
Qg(TOT)
VGS = 0V to 20V
VDD = 30V, ID 3A,
RL = 10
Ig(REF) = 1.0mA
(Figure 13)
-19
23
nC
Gate Charge at 10V
Qg(10)
VGS = 0V to 10V
-
10.7
13
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to 2V
-
0.71
0.85
nC
Gate to Source Gate Charge
Qgs
-1.40-
nC
Gate to Drain “Miller” Charge
Qgd
-4.80-
nC
Input Capacitance
CISS
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)
-
352
-
pF
Output Capacitance
COSS
-
146
-
pF
Reverse Transfer Capacitance
CRSS
-30-
pF
Thermal Resistance Junction to Ambient
RθJA
Pad Area = 0.164 in2 (See note 2)
-
110
oC/W
Pad Area = 0.068 in2 (See TB377)
-
126
oC/W
Pad Area = 0.026 in2 (See TB377)
-
143
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
VSD
ISD = 3A
-
1.25
V
Reverse Recovery Time
trr
ISD = 3A, dISD/dt = 100A/s-
-
41
ns
Reverse Recovered Charge
QRR
ISD = 3A, dISD/dt = 100A/s-
-
59
nC
NOTE:
2. 110oC/W measured using FR-4 board with 0.164 in2 footprint for 1000 seconds.
HUFA75309T3ST
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