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参数资料
| 型号： | HUFA75309T3ST |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET |
| 中文描述： | 3 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 3/8页 |
| 文件大小： | 175K |
| 代理商： | HUFA75309T3ST |
2001 Fairchild Semiconductor Corporation
HUFA75309T3ST Rev. B
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
TA, AMBIENT TEMPERATURE (
oC)
P
O
W
E
R
DIS
S
IP
A
T
ION
M
U
L
T
IP
L
IE
R
0
025
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
I D
,DRAI
N
CURRENT
(
A
)
TA, AMBIENT TEMPERATURE (
oC)
0
1
2
3
4
25
50
75
100
125
150
RθJA = 110
oC/W
0.001
0.01
0.1
1
10-1
100
101
102
103
10-2
10-3
10-4
10-5
Z
θJA
,NORM
AL
IZ
ED
T
H
E
R
M
A
L
IM
P
E
D
ANCE
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x Z
θJA x RθJA + TA
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
t , RECTANGULAR PULSE DURATION (s)
PDM
t1
t2
0.1
1
10
100
110
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
I D
,DRAI
N
CURRENT
(
A
)
TJ = MAX RATED
TA = 25
oC
100
s
10ms
1ms
VDSS(MAX) = 55V
LIMITED BY rDS(ON)
AREA MAY BE
OPERATION IN THIS
200
RθJA = 110
oC/W
1
10
103
50
102
101
100
10-1
10-2
10-3
t , PULSE WIDTH (s)
I DM
,PEAK
CURRENT
(
A
)
I = I25
150 - TA
125
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
TA = 25
oC
RθJA = 110
oC/W
HUFA75309T3ST
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相关代理商/技术参数 |
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|---|---|
| HUFA75321D3 | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75321D3S | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75321D3ST | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75321D3STQ | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUFA75321P3 | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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